Epi-SOI硅片制备与表征

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1、浙江大学硕士学位论文AbstractS01(SiliconOnInsulator)usedforintegratedcircuitOc)manufacturinghastwoadvantagesofincreasingspeedandreducingpowerconsumption．SIMOX(SeparatebyImplantOxygen)canbeusedt0fabricatehigh-qualityS01wafers．However,thetop-siliconlayerofSIMOX·S01wafersisverythin(typically500-300rim

2、)，whichlimitstheapplicationofsuchS01waferstoacertaindegree．Fortunately,thisissuecanbecircumventedbythecombinationofepitaxyandSIMOXprocesses，whichleadstoso-calledEpi·S01wafers．Inthisthesis，theEpi—SOlwaferswerepreparedbyambientpressurechemicalvapordeposition(APCVD)processontheSIMOX-S01subs

3、trates．Bymeansofpreferentialetching,thedefectsintheas-grownEpi-S01wafersandtheannealedoneswgTedelineated．Moreover,theoutdiffusionofoxygenfromtheburiedsiliconoxide(BOX)layerofSOIsubstratesWasinvestigated．Listedbelowarethemainresultsachievedinthisthesis．1．Thedefectsintheepi-layerofEpi·S01w

4、aferdelineatedbypreferentialetchingmanifestthemselvesaspunch-throughdislocationsanddislocationpairs，whichareoriginatedfromtheSOIsubstrates．2．Thedislocationdensityintheepi-layerofEpi·S01waferdependsstronglyontheSOlsubstrate．ItWasfoundthatthedislocationdensityinEpi-S01waferusingtheS01subs仃

5、atewitha150sinthicktop-siliconlayerwasoneorderofmagnitudehigherthanthatintheEpi-SOlwaferusingtheSOIsubstratewitha200眦thicktop-siliconlayer．3．ThehightemperaturearmealingCanbeusedtoreducethedislocationdensityintheEpi—S01wafer．ItWasexperimentallyfoundthedislocationdensityintheEpi-SOlwaferWa

6、sdecreasedtodifferentdegreesbytheannealingatdifferenttemperaturesintherangeof900～1200"C．Itispreliminarilybelievedthatduringthehightemperatureannealing,thedislocationsmovetotheepi-substrateinterfaceandtheedgeofsiliconwaferwheretheyareannihilatedand,moreover,thedislocationswi廿loppositeBurg

7、ersvectorswillinteractandthusultimatelybeingannihiiated．In浙江大学硕士学位论文4．Thehi}ghtemperatureannealingofEpi·S01wa向canleadtotheoutdiffusionofoxygenintheBOXlayerofS01substrate．Suchanoxygen-outdiffusionbecomesevel'strongerwithincreasedtemperatureinthe900-1100"(3，whileitisweakene