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1、4MetalOrganicChemicalVaporDeposition:TechnologyandEquipmentJohnL.Zilko1.0INTRODUCTIONThegrowthofthinlayersofcompoundsemiconductingmaterialsbytheco-pyrolysisofvariouscombinationsoforganometalliccompoundsandhydrides,knowngenericallyasmetal-organicchemicalvapordeposition(MOCVD),has
2、assumedagreatdealoftechnologicalimportanceinthefabricationofanumberofopto-electronicandhighspeedelectronicdevices.Theinitialdemonstrationofcompoundsemiconductorfilmgrowthwasfirstreportedin1968andwasinitiallydirectedtowardbecomingacompoundsemiconductorequivalentof“SilicononSapphi
3、re”growthtechnology.[1][2]Sincethen,bothcommercialandscientificinteresthasbeenlargelydirectedtowardepitaxialgrowthonsemiconductorratherthaninsulatorsubstrates.Stateoftheartperformancehasbeendemonstratedforanumberofcategoriesofdevices,includinglasers,[3]PINphotodetectors,[4]solar
4、cells,[5]phototransistors,[6]photocathodes,[7]fieldeffecttransistors,[8]andmodula-tiondopedfieldeffecttransistors.[9]Theefficientoperationofthesedevicesrequiresthegrownfilmstohaveanumberofexcellentmaterialsproperties,includingpurity,highluminescenceefficiency,and/orabruptinterfa
5、ces.In151152Thin-FilmDepositionProcessesandTechnologiesaddition,thistechniquehasbeenusedtodepositvirtuallyallIII-VandII-VIsemiconductingcompoundsandalloysinsupportofmaterialsstudies.TheIII-VmaterialsthatarelatticematchedtoGaAs(i.e.,AlGaAs,InGaAlP)andInP(i.e.,InGaAsP)havebeenthem
6、ostextensivelystudiedduetotheirtechnologicalimportanceforlasers,lightemittingdiodes,andphotodetec-torsinthevisibleandinfraredwavelengths.TheII-VImaterialsHgCdTe[10]andZnSSe[11][12]havealsobeenstudiedforfar-infrareddetectorsandbluevisibleemitters,respectively.Finally,improvedequi
7、pmentandprocessunderstandingoverthepastseveralyearshasledtodemonstrationsofexcellentmaterialsuniformityacross50mm,75mm,and100mmwafers.MuchoftheappealofMOCVDliesinthefactthatreadilytransport-able,highpurityorganometalliccompoundscanbemadeformostoftheelementsthatareofinterestinthe
8、epitaxialdepositionofdopedandundopedcompoundsem
