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1、146IEEETRANSACTIONSONDEVICEANDMATERIALSRELIABILITY,VOL.12,NO.1,MARCH2012TheInvestigationofElectrothermalCharacteristicsofHigh-VoltageLateralIGBTforESDProtectionQinsongQian,WeifengSun,Member,IEEE,ShoumingWei,SiyangLiu,andLongxingShiAbstract—Inthispaper,
2、thedetailedcharacterizationsofthewiththeavalanchediodes,theLDMOSofferslowerimpedancelateralinsulated-gatebipolartransistor(LIGBT)fortheelectro-duringtheholdingstageandrelativelyhigherESDcapabilitystaticdischarge(ESD)protectionofpowerICsarepresented.per
3、unitarea.However,itsshortcomingsareevident,includingComparedwiththeconventionallateralDMOSwiththesameunwantedhot-spotmigration,hot-carrierdegradationcausedstructureexceptfortheanodedopingtype,theLIGBTshowslowertriggeringvoltage,fastervoltage-clampingsp
4、eed,andmuchbyKirkeffect,andnonuniformturning-onofmultiplefingershigherESDrobustness.Experimentalresultsdemonstratethatthe[6].Inpractice,SCR-NLDMOShasbeenwidelyusedintheLIGBTwithrunwaylayoutachievesexcellentthermalbreakdownESDprotectionforhigh-voltagetec
5、hnologyduetoitshighcurrentofmorethan10Awith250-μmdevicewidth.Thehighfailurethreshold.Unfortunately,theSCR-NLDMOSincreasesESDperformanceenablestheLIGBTtobeusedasapromisingtheON-statevoltagedropandexhibitsanegativedifferentialESDprotectiondeviceinthepowe
6、rICs.resistanceregimewhichmaycauseanunstableoperationsuchIndexTerms—Electrostaticdischarge(ESD),lateralDMOSasoscillation[7],[8].(LDMOS)transistor,lateralinsulated-gatebipolartransistorInthispaper,thelateralinsulated-gatebipolartransistor(LIGBT),powerIC
7、s.(LIGBT)isrecommendedastheESDprotectiondeviceinhigh-voltagetechnology.InordertocharacterizetheperformanceofI.INTRODUCTIONtheLIGBTastheESDprotectiondevice,theresponsebehav-IGH-VOLTAGEdeviceshavebeenincreasinglyusediorsoftheLIGBTandtheLDMOSwiththesamest
8、ructureHforsmartpowerICs,suchasswitchingpowersupplies,exceptfortheanodedopingtypearecomparedbasedonTCADamplifiers,andautomotiveapplications.However,electrostaticsimulationsandtransmissionlinepulse(TLP)measurements.discharge(ESD)reliabili
