微波cvd制备硅薄膜类石薄膜白辉勇,熊军.ppt

《微波cvd制备硅薄膜类石薄膜白辉勇,熊军.ppt》由会员上传分享，免费在线阅读，更多相关内容在行业资料-天天文库。

1、微波CVD制备硅薄膜&类金刚石薄膜1微波法制备大面积硅薄膜设备及工艺（大面积）表面波微波等离子体线形微波等离子体2CapacitvelyCoupledPlasma１３．５６–６０ＭＨｚRelativelylowdensityNon-uniformitycausedbyStandingWaveEffectSkinEffectEdgeEffectElectromagneticpropertiesQuasi-staticpropertyElectrostaticpropertyPECVD&MWCVD（表面波微波等离子体）(1010–1011cm-3)SurfaceWavePl

2、asmaRelativelyhighdensity(1011~1012cm-3)Microwave(915MHz,2.45GHz)EasycontrolofuniformityQuartzPlateSurfaceWavePlasma3012341990199520002005GlassPlateArea(m2)WorkingYear20107thGen.6thGen.5thGen.4thGen.3rdGen.2ndGen.1stGeneration300x400370x470550x670730x9201,100x1,2501,500x1,8501,8700x2,250

3、TrendofLCDPanelGreatneedforlarge-areaplasmasourcesforgiantmaterialsprocessing.Example:-thinfilmdepositionforLCD(LiquidCrystalDisplay)-Thinfilmsolarcell-surfacecoatingofhousingglassplateforUVandIRlightcut,-surfacemodificationofplasticmaterialsandpaperGiantMaterialsProcessing4PlasmaQuartzp

4、lateWaveguideT-shapequartzUseofT-shapequartzHugemechanicalforceonquartzplateAreaof1m2Pressureof8tons7cmthickquartzplateDifficultiesinMicrowaveExcitationMicrowaveCVD---GiantHigh-densityPlasma5Waveguide2.45GHz1mQuartzPlatePlasmaQuartzPlateHugeAtomosphericPressure8tons/m27cml0=12cm6SiDeposi

5、tiononLargeSubstrateGlassSubstratePolymerFilmSubstrate1.8m0.2m1.8m0.3mExperimentalConditionsMicrowavePower~6kWPressure7PaH2/SiH4=25/25sccmSubstrateTemperature250oCExperimentalConditionsMicrowavePower~4kWPressure12PaH2/SiH4=25/50sccmSubstrateTemperature180oCMicro-crystallineSifilmsAmorpho

6、usSifilms7Power:2kW,Totalflowrate:522sccm(10%SiH4+90%H2),Substrate:250oCDepositionratemc-SiFilmDepositionVeryhighdepositionratewasachievedduetohighdensityplasma.8CrystallinevolumefractionRamanspectra40045050055060000.10.2RamanIntensity(arb.units)RamanShift(cm-1)SiH4Totalpressure:4Pa16Pa6

7、4Pa2H10%90%00.20.40.60.8101020304050607080XcTotalPressure(Pa)Highcrystallinevolumefractionof70%wasobtainedathighdepositionrate(~10nm/s:goal).mc-SiFilmDeposition9表面波微波法制备微晶硅薄膜工艺条件P型微晶硅性能要求本征I层微晶硅性能要求N型微晶硅性能要求衬底玻璃玻璃玻璃沉积速度(nm/s)~10~10~10薄膜厚度（nm）～30～3000～30均匀性（%）>90>90>90沉积温度