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ID:52470940
大小:1.62 MB
页数:52页
时间:2020-03-27
《Design of Hybrid SiC Varactor Driver Circuitusing SiC MESFET混合型SiC变容二极管驱动电路地设计 SiC MESFET地应用.pdf》由会员上传分享,免费在线阅读,更多相关内容在教育资源-天天文库。
1、DesignofHybridSiCVaractorDriverCircuitusingSiCMESFETMasterofScienceThesisinMasterDegreeProgramWirelessandPhotonicsEngineeringIMRANKHANMicrowaveElectronicsLaboratoryDepartmentofMicrotechnologyandNanoscience-MC2CHALMERSUNIVERSITYOFTECHNOLOGYGothenburg,Sweden,2012MasterThesisDesign
2、ofHybridSiCVaractorDriverCircuitusingSiCMESFETIMRANKHANExaminerHansHjelmgrenMicrowaveElectronicsLaboratoryDepartmentofMicrotechnologyandNanoscienceCHALMERSUNIVERSITYOFTECHNOLOGYGöteborg,Sweden,2012iDesignofHybridSiCVaractorDriverCircuitusingSiCMESFETImranKhan©ImranKhan,2012.Tech
3、nicalReportNo.MicrowaveElectronicsLaboratoryDepartmentofMicrotechnologyandNanoscience-MC2ChalmersUniversityofTechnologySE-41296GöteborgSwedenPhone:+46(0)317721000iiDesignofHybridSiCvaractorDriverCircuitusingSiCMESFETImranKhanDeparmentofmicrotechnologyandnanoscienceMC2ChalmersUni
4、versityofTechnologyAbstractThemainchallengeformobileserviceprovidersistheexponentialgrowthofthewirelessdatatrafficandtheincreasingnumberofusers.Thischallengeincreasesthecomplexityofradiobasestationsandpoweramplifiers.Alotofeffortisdonetoincreasethepoweramplifierefficiency,anddyn
5、amicloadmodulationisoneofthesuccessfultechniques.Atunablematchingnetworkisusedattheoutputtoprovidetheoptimumloadforaspecificoutputpower.Avaractor,voltagecontrolledcapacitor,isusedforthefasttuningofthematchingnetwork.Inthisthesisworkahybridvaractordrivercircuitisdesignedandimplem
6、entedtodriveanti-serieshighpowerSiCSchottkyvaractors.ThesehighpowerSiCvaractorscanprovideaveryhightuningratioof6:1atavoltageswingof60V.Twotypesofvaractordrivercircuitconfigurationsaresimulated,implementedandcomparedintermsofimportantfigureofmeritslikedriverDCpowerconsumption,dri
7、verbandwidth,anti-seriesvaractorRFimpedance,anddriverlinearstatictransferfunction.InoneconfigurationahighresistorisusedforbiasingtheswitchingtransistorandintheotherconfigurationagatetosourceconnectedMESFETisusedforbiasingtheswitchingtransistor.ThedesigneddrivercircuithasaverageD
8、Cpowerconsumptionlessthan1W,isolationofdriveran
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