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1、PL4009N-ChannelEnhancementModeFieldEffectTransistorGeneralDescriptionFeaturesThePL4009usesadvancedtrenchtechnologytoVDS(V)=30VprovideexcellentRDS(ON),lowgatechargeandID=5.8A(VGS=10V)operationwithgatevoltagesaslowas2.5V.ThisRDS(ON)<28mΩ(VGS=10V)deviceissuitableforuseasaloadswitchor
2、inPWMRDS(ON)<33mΩ(VGS=4.5V)applications.StandardProductPL4009isPb-freeRDS(ON)<52mΩ(VGS=2.5V)(meetsROHS&Sony259specifications).PL4009AisaGreenProductorderingoption.PL4009andPL4009Aareelectricallyidentical.TO-236D(SOT-23)TopViewGDSGSAbsoluteMaximumRatingsTA=25°CunlessotherwisenotedP
3、arameterSymbolMaximumUnitsDrain-SourceVoltageVDS30VGate-SourceVoltageVGS±12VContinuousDrainTA=25°C5.8ACurrentTA=70°CID4.9ABPulsedDrainCurrentIDM30TA=25°C1.4APDWPowerDissipationTA=70°C1JunctionandStorageTemperatureRangeTJ,TSTG-55to150°CThermalCharacteristicsParameterSymbolTypMaxUni
4、tsAt≤10sMaximumJunction-to-Ambient6590°C/WARθJAMaximumJunction-to-AmbientSteady-State85125°C/WCSteady-StateR°C/WMaximumJunction-to-LeadθJL4360PuLanTechnology,Ltd.PL4009ElectricalCharacteristics(TJ=25°Cunlessotherwisenoted)SymbolParameterConditionsMinTypMaxUnitsSTATICPARAMETERSBVDS
5、SDrain-SourceBreakdownVoltageID=250µA,VGS=0V30VVDS=24V,VGS=0V1IDSSZeroGateVoltageDrainCurrentµATJ=55°C5IGSSGate-BodyleakagecurrentVDS=0V,VGS=±12V100nAVGS(th)GateThresholdVoltageVDS=VGSID=250µA0.71.11.4VID(ON)OnstatedraincurrentVGS=4.5V,VDS=5V30AVGS=10V,ID=5.8A22.828mΩTJ=125°C3239R
6、DS(ON)StaticDrain-SourceOn-ResistanceVGS=4.5V,ID=5A27.333mΩVGS=2.5V,ID=4A43.352mΩgFSForwardTransconductanceVDS=5V,ID=5A1015SVSDDiodeForwardVoltageIS=1A,VGS=0V0.711VISMaximumBody-DiodeContinuousCurrent2.5ADYNAMICPARAMETERSCissInputCapacitance8231030pFCossOutputCapacitanceVGS=0V,VDS
7、=15V,f=1MHz99pFCrssReverseTransferCapacitance77pFRgGateresistanceVGS=0V,VDS=0V,f=1MHz1.23.6ΩSWITCHINGPARAMETERSQgTotalGateCharge9.712nCQgsGateSourceChargeVGS=4.5V,VDS=15V,ID=5.8A1.6nCQgdGateDrainCharge3.1nCtD(on)Turn-OnDelayTime3.35nstrTurn-OnRiseTimeVGS=10V,VDS=15V,RL=2.7Ω,4.87ns
8、tD(off)Turn-OffDelayTimeRGEN=3Ω26