Analysis of oxygen incorporation in unidirectionally solidified multicrystalline silicon for solar cells.pdf

Analysis of oxygen incorporation in unidirectionally solidified multicrystalline silicon for solar cells.pdf

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时间:2019-03-15

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1、ARTICLEINPRESSJournalofCrystalGrowth310(2008)2204–2208www.elsevier.com/locate/jcrysgroAnalysisofoxygenincorporationinunidirectionallysolidifiedmulticrystallinesiliconforsolarcellsa,a,bccdHitoshiMatsuo,R.BairavaGanesh,SatoshiNakano,LijunLiu,KojiArafune,dda,

2、cYoshioOhshita,MasafumiYamaguchi,KoichiKakimotoaGraduateSchoolofEngineering,KyushuUniversity,6-1Kasuga-koen,Kasuga,Fukuoka816-8580,JapanbCrystalGrowthCentre,AnnaUniversity,Chennai600025,IndiacResearchInstituteforAppliedMechanics,KyushuUniversity,6-1Kasuga-

3、koen,Kasuga,Fukuoka816-8580,JapandToyotaTechnologicalInstitute,2-12-1Hisakata,Tempaku-ku,Nagoya468-8511,JapanAvailableonline15December2007AbstractWestudiedtheprocessofoxygentransferfromaquartzcrucibletoamulticrystallinesiliconduringunidirectionalsolidificat

4、ionprocess.WeinvestigatedtheboundarylayerthicknessofoxygenconcentrationnearacruciblewallregionusingFouriertransforminfraredspectrometer(FTIR)measurement.Theresultssuggestthatoxygenconcentrationwasincreasednearacruciblewall,andtheboundarylayerthicknessofoxy

5、genconcentrationwasestimatedtobe2–6mm.Theestimatedvalueofboundarylayerthicknessofoxygenconcentrationsissimilartothoseestimatedbyanalyticalandnumericalcalculation.TheseresultssuggestthattheoxygenwasdissolvedfromacruciblewallthroughthelinermadeofSi3N4totheme

6、ltduringgrowthprocess.r2008ElsevierB.V.Allrightsreserved.PACS:81.10.FqKeywords:A1.Directionalsolidification;A1.Impurities;B2.Semiconductingsilicon;B3.Solarcells1.Introductioncells.Oxygeninasiliconingotenhancesthestrengthofthesiliconwafer;however,oxygenforms

7、precipitations[3],Thephotovoltaicmarkethasdevelopedremarkablyindislocationsandstackingfaults[4].Furthermore,boron–recentyears[1],andmulticrystallinesiliconhasamarketoxygencomplexescauseaseriousproblemoflight-shareofmorethan50%inallphotovoltaicmaterials.ind

8、uceddegradationinsolarcells[5]sincetheyalsoactMulticrystallinesiliconisanimportantmaterialwithasrecombinationcentersofphotocarriers.Therelationshipadvantagesoflow-productioncostandhigh-conversionbetweenoxygen

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