VHFPECVD制备大面积硅基薄膜的研究

VHFPECVD制备大面积硅基薄膜的研究

ID:36463181

大小:1.18 MB

页数:35页

时间:2019-05-10

VHFPECVD制备大面积硅基薄膜的研究_第1页
VHFPECVD制备大面积硅基薄膜的研究_第2页
VHFPECVD制备大面积硅基薄膜的研究_第3页
VHFPECVD制备大面积硅基薄膜的研究_第4页
VHFPECVD制备大面积硅基薄膜的研究_第5页
资源描述:

《VHFPECVD制备大面积硅基薄膜的研究》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库

1、南开大学硕士学位论文VHF-PECVD制备大面积硅基薄膜的研究姓名:王凯杰申请学位级别:硕士专业:微电子与固体电子学指导教师:薛俊明20030528童茎奎兰堡主堑窒皇望、业堡苎一一j堕!!苎2ABSTRACTThesiliconthinfilmshavewidespreadapplicationsinthefieldofphotovoltaicsolarCellsandthin.filmtransistorforflatscreenproduction.Themethodofplasmaenhancedchemicalvapordeposition

2、(PECVD)istheimportanttechniquetoproducethem,buttheconventionalPECVDmethodwith13.56MI-Izexcitationfrequencydoesnotsatisfytheneedofindustrialproduction.TheresearchhasprovedthatthesiliconthinfilmscanbedepositedbyⅧ一PECVDwithlargeareaandhighspeed,Thispapermainlydescribedaboutsevera

3、lworksasfollow:ThemainproblemistheuniformityoflargeareathinfilmswhenweusetheVI-琢-PECVDtodepositedsiliconthinfilms.Themainfactortoaffecttheuniformityofthinfilmsistheuniformityoftheelectricfielddistributionontheelectrode.Thestandingwaveisthemainfactortoaffecttheuniformityoftheel

4、ectricfielddistributionwhentheexcitationfrequencyisintherangeofⅧFIbutweCalleliminatetheaffectofthestandingwavebyselectingtheconnectionpositionofthefeedingline.WedecidetOusethemethodofthefeedinglineconnectwiththeelectrodecenter.Thecharacteroftheamorphoussiliconthinfilmdeposited

5、bythemethodis:theareais23X24cm2,thehomogeneityislessthan±10%.Wehadstudiedhowtoobtainthedevicegradeamorphoussiliconthinfilmwithlargearea,gooduniformityandhighdepositionrateWehadstillstudiedtheaffectsthegaspressure,thepowerandthefluxtotheuniformity,depositionrateandthecharactero

6、fthematerialWefoundthattoincreasethegaspressureproperlycallincreasetheuniformityofthefilms,butthechangesofthepowerhavenoeffecttOtheuniformity.Thedepositionratewillincreasewiththegaspressureandthepowerincreasingproperly.Whenthegaspressureislow,thequalityofthethinfilmsisgoodWesh

7、ouldselectthepowerproperlytoobtmnhi曲qualitythinfilms.Inthebaseofthestudies,weobtainthehighqualityoftheamorphoussiliconthinfilmsonthenormalglassbyoptimifingthedepositionconditionThebestuniformityislessthan±14%Thehighestdepositionis5.5A/sThephotosensitivityis225×105.Keywords:VHF

8、—PECVD,uniformity,amorphoussiliconthinfilm,depositionrate3南开大

当前文档最多预览五页,下载文档查看全文

此文档下载收益归作者所有

当前文档最多预览五页,下载文档查看全文
温馨提示:
1. 部分包含数学公式或PPT动画的文件,查看预览时可能会显示错乱或异常,文件下载后无此问题,请放心下载。
2. 本文档由用户上传,版权归属用户,天天文库负责整理代发布。如果您对本文档版权有争议请及时联系客服。
3. 下载前请仔细阅读文档内容,确认文档内容符合您的需求后进行下载,若出现内容与标题不符可向本站投诉处理。
4. 下载文档时可能由于网络波动等原因无法下载或下载错误,付费完成后未能成功下载的用户请联系客服处理。