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1、776IEEETRANSACTIONSONCIRCUITSANDSYSTEMSII:EXPRESSBRIEFS,VOL.59,NO.11,NOVEMBER2012A10-MHzGaNHEMTDC/DCBoostConverterforPowerAmplifierApplicationsFlorentGamand,MingDongLi,andChristopheGaquièreAbstractAlGaN/GaNHEMTsshowlowON-stateresistanceandsmallgatecapacitances,whichmakesthemgoodcandidatesfo
2、rswitchingapplications.Uptonow,theirexploitationsindc/dcconvertershavebeenlargelyinvestigatedinhighpowerelectronicsbutwithswitchingfrequenciesunder1MHz.Inthisbrief,thepotentialitiesofGaNHEMTsareinvestigatedforhigh-speeddc/dcconverters.Tothisaim,a10-MHzGaN1634-Vboostconverterwithabove-90%ef
3、ficiencyispresented.Suchconvertersarewellsuitedforhigh-efficiencypoweramplifiersbasedondynamicbiascontrolforhighpeak-to-average-power-ratioapplications.Fig.1.Circuitschematicoftheboostdc/dcconverter.IndexTermsConverter,dc/dc,dynamicbias,GaN,HEMT,(PAPR)variations.AMOSFET-basedbuckdc/dcconverte
4、rwashighefficiency.usedwithaGaAsclass-Eamplifierin[5],obtainingthePAEtopassfrom41.5%to60%.In[6],aCreeCGH40025GaNI.INTRODUCTIONHEMTwasusedina60-MHzboostconverterwithupto90%WINGTOtheircapabilityofmanaginghighpowerefficiency,butauthorsdidnotgiveanydetailsaboutpassiveOlevels,goodlinearityproperti
5、es,andhightransitionfre-componentsusedintheconverter.quency,GaN-basedtransistorshavedemonstratedexcellentThetargetofthisbriefistoinvestigatethepossibilityofperformancesinmicrowavecircuits,suchashigh-efficiencydesigningahigh-speed10-MHzdc/dcconverterforRFpowerpoweramplifiers,low-noiseamplifier
6、s,andmixers.GaNapplicationsbyusingthesameHEMTtechnologyasinRFHEMTsalsoshowalowdrainsourceon-resistance,duetopoweramplifiersandstandardcommercialpassivecomponents.theirhighcurrentdensity,andrelativelysmallgatecapaci-Tothisaim,asimpleboostconverterwasdesignedtoconverttancesCGDandCGSasHEMTsare
7、lateraldevices.Thesethe16-VinputvoltagetoanoutputvoltagevaryingbetweencharacteristicsmakeAlGaN/GaNHEMTsgoodcandidatesfor17and40V,withanoutputpowerupto20W;thesevolt-switchlikeapplications.Theiruseindc/dcconvertercircuitageandpowerrangesarecompatiblewithtypicald
