Modeling of the gas-phase chemistry in C-H-O gas mixtures for diamond Chemical Vapor Deposition

Modeling of the gas-phase chemistry in C-H-O gas mixtures for diamond Chemical Vapor Deposition

ID:40085615

大小:112.06 KB

页数:5页

时间:2019-07-20

Modeling of the gas-phase chemistry in C-H-O gas mixtures for diamond Chemical Vapor Deposition_第1页
Modeling of the gas-phase chemistry in C-H-O gas mixtures for diamond Chemical Vapor Deposition_第2页
Modeling of the gas-phase chemistry in C-H-O gas mixtures for diamond Chemical Vapor Deposition_第3页
Modeling of the gas-phase chemistry in C-H-O gas mixtures for diamond Chemical Vapor Deposition_第4页
Modeling of the gas-phase chemistry in C-H-O gas mixtures for diamond Chemical Vapor Deposition_第5页
资源描述:

《Modeling of the gas-phase chemistry in C-H-O gas mixtures for diamond Chemical Vapor Deposition》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库

1、JOURNALOFAPPLIEDPHYSICSVOLUME89,NUMBER91MAY2001Modelingofthegas-phasechemistryinC–H–Ogasmixturesfordiamondchemicalvapordepositiona)JamesR.Petherbridge,PaulW.May,andMichaelN.R.AshfoldSchoolofChemistry,UniversityofBristol,Bristol,BS81TSUnitedKingdom~Received21November2000

2、;acceptedforpublication8February2001!TheboundariesofthediamonddepositionregionintheC±H±O~Bachmann!atomicphasecompositiondiagramhavebeenreproducedsuccessfullyfor38differentC,H,andOcontaininggasmixturesusingtheCHEMKINcomputerpackage,togetherwithjusttwocriteriaÐaminimummol

3、efractionofmethylradicals@CH3#andalimitingvalueofthe@H#/@C2H2#ratio.Thediamondgrowth/no-growthboundarycoincideswiththelinealongwhichtheinputmolefractionsofCandOareequal.Foreverygasmixturestudied,no-growthregionsarefoundtocoincidewithanegligible(,10210)molefractionofCHra

4、dicals,whileforgasmixtureslyingwithinthediamond3growthregiontheCHmolefractionis;1027.Eachno-growth!diamondgrowthboundaryis3seentobeaccompaniedbya2±3orderofmagnitudestepinCH3molefraction.Theboundarybetweendiamondandnondiamondgrowthislessclearlyde®ned,butcanbereproducedby

5、assumingacritical,temperaturedependent@H#/@C2H2#ratio~0.2,inthecasethatTgas52000K!thatre¯ectsthecrucialroleofHatomsintheetchingofnondiamondphases.Theanalysisallowspredictionofthecompositionprocesswindowforgoodqualitydiamondgrowthforallstableinputgasmixturesconsideredint

6、hisstudy.©2001AmericanInstituteofPhysics.@DOI:10.1063/1.1360221#I.INTRODUCTIONmodelthatconsideredbothgasphaseandgas-surfacechem-istrytocalculatemolefractionsofC,H,andOcontainingLow-pressurediamonddepositionhasbeenachievedus-radicalspecies,whichwerethenplottedintheformof

7、aingalargerangeofC,H,andOcontaininggasmixtures.ternaryC±H±Odiagram.Wenote,however,thatthisstudy1,2Bachmannetal.summarizedtheresultsofmanydeposi-coversonlyasmallsectionoftheconventionalBachmanntionexperimentsinvolvingvariousgasmixturesandreactordiagram.HerewepresentCHEMK

8、INsimulationsofgasmix-typesintheformofanatomicC±H±Ophasediagram.Theyturescorrespondingto38cutsthroughlargewide

当前文档最多预览五页,下载文档查看全文

此文档下载收益归作者所有

当前文档最多预览五页,下载文档查看全文
温馨提示:
1. 部分包含数学公式或PPT动画的文件,查看预览时可能会显示错乱或异常,文件下载后无此问题,请放心下载。
2. 本文档由用户上传,版权归属用户,天天文库负责整理代发布。如果您对本文档版权有争议请及时联系客服。
3. 下载前请仔细阅读文档内容,确认文档内容符合您的需求后进行下载,若出现内容与标题不符可向本站投诉处理。
4. 下载文档时可能由于网络波动等原因无法下载或下载错误,付费完成后未能成功下载的用户请联系客服处理。