Crystallization and Thermoelectric Transport in Semiconductor Micro- and Nanostructures Under Extreme Conditions

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1、DE-SC00050389/1/10-5/31/17FINALTECHNICALREPORTCRYSTALLIZATIONANDTHERMOELECTRICTRANSPORTINSEMICONDUCTORMICRO-ANDNANOSTRUCTURESUNDEREXTREMECONDITIONSSubmittedAugust30,2017AliGokirmakHelenaSilvaUniversityofConnecticut1.ABSTRACT..........................................................

2、...................................................................................32.AWARDPERIOD9/1/2010TO3/1/2013..................................................................................................4Summaryofobjectivesandaccomplishments...............................

3、...........................................................4High-temperaturethermoelectrictransportatsmallscales.......................................................................4Finiteelementsimulations&materialsparameters......................................................

4、............................7Extractionoftemperaturedependentelectricalresistivityandthermalconductivityunderextremethermalgradients.....................................................................................................................................12Percolationtran

5、sportandfilamentformationinnanocrystallinesiliconnanowires...............................14Crystallizationofsiliconmicrostructuresthroughrapidself-heating.....................................................17Significanceofthermoelectriceffectsonself-heatingcrystallizationdepending

6、onelectricalconditions-relativeimpactofJouleandThomsonheat..........................................................................................20Relatedpublications(9/2010to3/2013).................................................................................................

7、213.NON-EQUILIBRIUMSEMICONDUCTORFINITEELEMENTMODELING–GENERATION-TRANSPORT-RECOMBINATIONOFMINORITYCARRIERS.................................................................................................23Bandgapdegradation...........................................................

8、..........................