硅行业专业术语

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1、Acceptor-Anelement,suchasboron,indium,andgalliumusedtocreateafreeholeinasemiconductor.Theacceptoratomsarerequiredtohaveonelessvalenceelectronthanthesemiconductor. 受主-一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体元素少一价电子 AlignmentPrecision-Displacementofpatternsthatoccursduringthephotolithographyprocess.

2、 套准精度-在光刻工艺中转移图形的精度。 Anisotropic-Aprocessofetchingthathasverylittleornoundercutting 各向异性-在蚀刻过程中，只做少量或不做侧向凹刻。 AreaContamination-Anyforeignparticlesormaterialthatarefoundonthesurfaceofawafer.Thisisviewedasdiscoloredorsmudged,anditistheres*不良词语*tofstains,fingerprints,waterspots,etc. 沾污区域-任何在晶圆片表

3、面的外来粒子或物质。由沾污、手印和水滴产生的污染。 Azimuth,inEllipsometry-Theanglemeasuredbetweentheplaneofincidenceandthemajoraxisoftheellipse. 椭圆方位角-测量入射面和主晶轴之间的角度。 Backside-Thebottomsurfaceofasiliconwafer.(Note:Thistermisnotpreferred;instead,use‘backsurface’.) 背面-晶圆片的底部表面。（注：不推荐该术语，建议使用“背部表面”） BaseSiliconLayer-The

4、siliconwaferthatislocatedunderneaththeins*不良词语*atorlayer,whichsupportsthesiliconfilmontopofthewafer. 底部硅层-在绝缘层下部的晶圆片，是顶部硅层的基础。 Bipolar-Transistorsthatareabletousebothholesandelectronsaschargecarriers. 双极晶体管-能够采用空穴和电子传导电荷的晶体管。 BondedWafers-Twosiliconwafersthathavebeenbondedtogetherbysilicondio

5、xide,whichactsasanins*不良词语*atinglayer. 绑定晶圆片-两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。 BondingInterface-Theareawherethebondingoftwowafersoccurs. 绑定面-两个晶圆片结合的接触区。 BuriedLayer-Apathoflowresistanceforacurrentmovinginadevice.Manyofthesedopantsareantimonyandarsenic. 埋层-为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。 BuriedOxideLayer(B

6、OX)-Thelayerthatins*不良词语*atesbetweenthetwowafers. 氧化埋层(BOX)-在两个晶圆片间的绝缘层。 Carrier-Valenceholesandconductionelectronsthatarecapableofcarryingachargethroughasolidsurfaceinasiliconwafer. 载流子-晶圆片中用来传导电流的空穴或电子。 Chemical-MechanicalPolish(CMP)-Aprocessofflatteningandpolishingwafersthatutilizesbothche

7、micalremovalandmechanicalbuffing.Itisusedduringthefabricationprocess. 化学-机械抛光(CMP)-平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。 ChuckMark-Amarkfoundoneithersurfaceofawafer,causedbyeitheraroboticendeffector,achuck,orawand. 卡盘痕迹-在晶圆片任意表面发现的由机械手、卡盘或