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1、MOSFETMODELINGFORCIRCUITANALYSISANDDESIGNInternationalSeriesonAdvancesinSolidStateElectronicsandTechnology(ASSET)FoundingEditor:Chih-TangSahPublished:ModernSemiconductorQuantumPhysicsbyLiMing-FuTopicsinGrowthandDeviceProcessingofIII-VSemiconductorsbyStephenJoh
2、nPearton,CammyR.Abernathy&FanRenIonizingRadiationEffectsinMOSOxidesbyTimothyR.OldhamMOSFETModelingforVLSISimulation:TheoryandPracticebyNarainAroraForthcoming:ThePhysicsandModelingofMOSFETS:Surface-PotentialModelHiSIMbyMitikoMiura-Mattausch,HansJürgenMattausch&
3、TatsuyaEzakiBSIM4:TheoryandEngineeringofMOSFETModelingforICSimulationbyWeidongLiu&ChenmingHuSteven-MOSFETModeling.pmd212/11/2006,10:13AMASSETInternationalseriesonAdvancesinsolidstateElectronicsandTechnologyFoundingEditor:chih-TangsahMOSFETMODELINGFORCIRCUITANA
4、LYSISANDDESIGNCarlosGalup-MontoroMARCIOcHEREMSCHNEIDERfEDERALuNIVERSITYOFsANTAcATARINA,bRAZILWORLDSCIENTIFICnewjersey.london.singapore.beijing.shanghai.hongkong.taipei.chennaiPublishedbyWorldScientificPublishingCo.Pte.Ltd.5TohTuckLink,Singapore596224USAoffice:
5、27WarrenStreet,Suite401-402,Hackensack,NJ07601UKoffice:57SheltonStreet,CoventGarden,LondonWC2H9HEBritishLibraryCataloguing-in-PublicationDataAcataloguerecordforthisbookisavailablefromtheBritishLibrary.MOSFETMODELINGFORCIRCUITANALYSISANDDESIGNInternationalSerie
6、sonAdvancesinSolidStateElectronicsandTechnologyCopyright©2007byWorldScientificPublishingCo.Pte.Ltd.Allrightsreserved.Thisbook,orpartsthereof,maynotbereproducedinanyformorbyanymeans,electronicormechanical,includingphotocopying,recordingoranyinformationstoragean
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8、romthepublisher.ISBN-13978-981-256-810-6ISBN-10981-256-810-7Disclaimer:Thisbookwaspreparedbytheauthors.NeitherthePublishernoritsSeriesEditorthereof,noranyoftheiremployees,assumesan
