集成电路芯片的失效机理

《集成电路芯片的失效机理》由会员上传分享，免费在线阅读，更多相关内容在学术论文-天天文库。

1、faprl专题1-电子产品的失效机理集成电路芯片的失效机理JingsongXie,Ph.D.FailureAnalysis&PhysicsResearchLab.(FAPRL)北京航空航天大学可靠性工程研究所2008年10月29-31日FailureMechanismsofICDevicesfaprlThemostsignificantphysicalfailuremechanisms(intrinsicfailure)inmodernelectronicdevices:•Electromigration(EM)•Hotca

2、rrierinjection(HCI)•Time-dependentdielectricbreakdown(TDDB)•Negativebiastemperatureinstability(NBTI)faprlElectromigration(EM)/StressVoidingElectrical:金属线中的电迁移faprlElectromigrationinanaluminumElectromigrationinthealuminumintegratedcircuittrackwithconductorofapowertr

3、ansistorhaspreferentialmigrationatgrainbuiltupaluminumattheleftandboundaries.depleteditontheright.ElectromigrationanditsPhysicsProcessfaprl•Electromigrationisthedominatingfailuremodeofinterconnects.Itischaracterizedbythemigrationofmetalatomsinaconductorthroughwhich

4、largedirect-currentdensitiespass.•AsICtechnologyincreasesdevicedensity,theinterconnectsthatcarrysignalsareconsequentlyreducedinsize,specifically,inheightandcrosssection.Thisleadstoextremelyhighcurrentdensities,ontheorderofatleast106A/cm2.•Atthesecurrentdensities,mo

5、mentumtransferbetweenelectronsandmetalatomsbecomesimportant.Thetransfer,whichiscalledtheelectron-windforce,resultsinamasstransportalongthedirectionofelectronmovement.EMFailureProcessfaprlDiffusionBarriersfaprlElectrical:在机械力作用下产生的空洞faprlStressvoidsinamicrowavepower

6、Stressvoidsinaluminumtracksofatransistorhavereducedtheconductormemorycircuit(afterremovalofthewidthssufficientlytomakethemglasscoating).vulnerabletoelectromigration.faprlHotCarrierInjection(HCI)HotCarrierInjectionMechanismsfaprl•Channelhotelectron(CHE)injection•Dra

7、inavalanchehotcarrier(DAHC)injection•Secondarygeneratedhotelectron(SGHE)injectionHotCarrierGenerationandDegradationinMOSFETsfaprlHotCarrierInjectionMechanisms-ChannelHotfaprlElectron(CHE)Injection•Channelhotelectron(CHE)injection:CHEinjectionisduetotheescapeof“luck

8、y”electronsfromthechannel,causingasignificantdegradationoftheoxideandtheSi−SiO2interface,especiallyatlowtemperature(77K).Channel-hot-electroninje