封装制程补充教材(封装前段).ppt

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1、封裝製程補充教材封裝前段製程D/S-DiesawD/B-DiebondW/B-Wirebond封裝前段製程流程DieSaw(晶片切割)DieBond(銲粒)WireBond(銲線)封裝製程補充教材D/S站－A.作業機台(1)DiscoDAD320/DAD321切割機(圖片)(2)SC-2500自動旋乾機(圖片/影檔)B.作業準備(1)D.1water(2)Bluetape(NITTOSPV-225)(3)NBC-Z2030刀片-切割道寬度＞60um(圖片)(4)NBC-Z203J刀片-切割道寬度＜60umC.

2、作業順序:(0)D/S前處理-晶片研磨(10~12mil)(1)晶片貼藍膜(離子風扇開啟狀態)(影檔)(2)烘乾50℃/5分鐘(圖片)(3)切割機切割晶片(影檔)(4)清洗及旋乾(自動旋乾機)(影檔)(5)烘乾40℃/5分鐘(圖片)D/B站-A.制程比较(dieattachmethod)(1)共金(2)导电/非导电胶(3)共锡B.吸嘴型式C.L/F材质D.D/B作业机台(1)共金-ILB(圖片/影檔)(2)导电/非导电胶-AD828/AD830/AD898/AD8930/CPS-100VX(圖片/影檔)(3)

3、共锡-NECCPS-510/ASMSD890A(圖片/影檔)E.导电性F.散热性封裝製程補充教材封裝製程補充教材A.製程比較(dieattachmethod)封裝製程補充教材B.吸嘴型式W/B站-A.製程比較(wirebondmethod)B.W/B原理(1)金/銅線(Thermalsonic)a.FABb.HAZc.IMCd.FusingCurrent(2)鋁線(Ultrosonic)a.FusingCurrentC.瓷嘴/鋼嘴型式D.wirebonder架構E.W/B作業機台(圖片/影檔)F.金/銅/鋁物

4、理特性G.金線與銅線製程異同H.銅線的優點與缺點封裝製程補充教材封裝製程補充教材A.製程比較(wirebondmethod)封裝製程補充教材B.W/B原理(1)Thermalsonica.FAB(FreeAirBall)封裝製程補充教材BallformingconditionWire:CDtype1.0milWirebonder:SWB700Forminggas:N2+5%H2Taillength:250micron.mEFOcurrent(燒球電流):6AEFOtime(燒球時間):1.2msecb.HAZ

5、(HeatAffectedZone)封裝製程補充教材HAZLength=Approx.120um(GrainGrowthZone)20umX2.0KWireType:CDWireDiameter:1.0milEtchingConditionEtchant:10mlHNO3+10mlD.I.WaterEtchingMethod:FumingMethodEtchingTime:1~10sec.FAB=2W.D.(VeryCoarseGrains)Wire(ThermallyStableZone)HAZ(He

6、atAffectedZone)封裝製程補充教材Etchingwithsolution(10mlHNO3+10mlD.I.Water)forgrainstructureobservationWireEtchingFreeAirBallformationFormationofFreeAirBall(FAB=2WD)PhotographingfromtheballtowireusingSEMImageObservation(SEM)Measuregrainsizesatevery20㎛GrainSizeMeasur

7、ementDeterminationofHAZDeterminethegrainsizedecreasingpointHAZKinkReverseNote:Generally,thelengthofHAZandLoopHeightshouldbesame.HAZStartingPointEndpoint封裝製程補充教材HAZ(HeatAffectedZone)封裝製程補充教材c.IMC(HeatAffectedZone)球與pad結合分析ComparisonofIMCandKirkendallvoidform

8、ationsinCuandAuwiretoAlpadTestConditionBakingTemp.:175oCBakingTime:1000hrd.FusingCurrent封裝製程補充教材FusingCurrent(A)WireSize(mil)Tes