半导体材料88

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1、SemiconductormaterialsLecturer:AiminLiu&WeifengLiu刘爱民刘维峰12Chemicalvs.chemical/physicaletchingPurelychemicaletching(usingonlyreactiveneutralspecies)IsotropicetchingChemical+physicaletching(usingreactiveneutralspeciesandionicspecies)Anisotropicetching3•Manydi

2、fferentmechanismsproposedforthissynergisticetchingbetweenphysicalandchemicalcomponents.Twomechanismsareshownabove.•Ionbombardmentcanenhanceetchprocess(suchasbydamagingthesurfacetoincreasereaction,orbyremovingetchbyproducts),orcanremoveinhibitorthatisanindir

3、ectbyproductofetchprocess(suchaspolymerformationfromcarboningasorfromphotoresist).•Whatevertheexactmechanism(multiplemechanismsmayoccuratthesametime):•needbothcomponentsforetchingtooccur.•getanisotropicetchingandlittleundercuttingbecauseofdirectedionflux.•g

4、etselectivityduetochemicalcomponentandchemicalreactions.Therearemanyapplicationsinetchingtoday.Ion-EnhancedEtchingChemicalcomponentselectivityPhysicalcomponentanisotropyvolatilityofbyproductsRolesofions:Adsorption,Reaction,Formationofbyproducts,removalSILIC

5、ONVLSITECHNOLOGYFundamentals,PracticeandModelingByPlummer,Deal&Griffin©2000byPrenticeHallUpperSaddleRiverNJ4Effectoftheinhibitorw/oinhibitor=>Isotropicw/inhibitor=>Anisotropic5PlasmaassistedetchingDrychemicaletching(Plasmaetching)RFenergyisappliedtoaseparat

6、eelectrodewiththesubstratesgrounded.Materialisremovedfromthesubstratebychemicalmeans.PurelychemicaletchingGlowdischargeisusedtoproducechemicallyreactivespecies(atoms,radicals,orions)Reactive-ionEtching(RIE)IfRFenergyisappliedtothesubstratesinalowpressurehal

7、ogen-richenvironment,materialcanberemovedbybothchemicalmeansandionbombardmentofthesubstratesurface.Greatercontroloverlinewidthsandedgeprofilesispossiblewithoxides,nitrides,polysiliconandaluminum.Acombinationofphysical/chemicaletchingAccomplishedbyreplacingt

8、heneutralgasinar.f.sputteringsystembyoneormorechemicalspeciesGlowdischargeisusedtoproducechemicallyreactivespecies(atoms,radicals,orions)andchemicallyinertionsHighlyanisotropicetching6溅射离子刻蚀原理及斜面刻蚀分析1.