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1、ITO薄膜晶体管辅助层的文献调研薄膜晶体管与先进显示技术实验室姓名：刘洋学号：1101213713研究小组：TFT一组ThinFilmTransistorandAdvancedDisplayLab组会汇报文献调研实验进展下一步实验计划汇报内容文献调研实验进展下一步研究计划文献调研背景目前在实验室制备的ITOTFT器件中，迁移率不高~10cm2/vs，且有源层厚度在10nm左右，厚度太薄易产生其他问题，如不同区域器件特性不均匀，实验可重复性差；另一方面，实验证实IGZO作为辅助层的ITOTFT迁移率有所提高，因此希望找到其他的辅助层材料实现调节阈值电压，提高迁移率的作用，比如ZTO。图
2、1ITOTFTId-Vg转移特性图图2ITO/IGZOTFTId-Vg转移特性图文献调研实验进展下一步研究计划文献调研一器件结构：Bottomgatestructure工艺流程：Mo栅SiO2栅介质：PECVD380℃，120nmITO层：O2/[Ar+O2]=44%，0.26Pa，DCpowerdensity2.2W/cm2ZTO层：~Zn:Sn=70:30，magnetronsputterTheactiveareawasdefinedusingashadowmaskduringdepositionoftheZTO/ITOfilm.(W/L=1000μm/15μm)ITO源/漏：D
3、Csputter退火：空气中1h500℃Ji-InKim,K.H.Ji,H.Y.Jung,etc,”ImprovementinbothmobilityandbiasstabilityofZnSnOtransistorsbyinsertingultra-thinInSnOlayeratthegateinsulator/channelinterface”,AppliedPhysicLetters99,122102(2011).文献调研实验进展下一步研究计划文献调研一FIG.3.(Coloronline)Evolutionofthetransfercharacteristicsofthe(
4、a)ZTOand(b)ZTO/ITO(3.5nm)devicesasafunctionofthenegativebiasstress(-BS)time,and(c)ZTOand(d)ZTO/ITO(3.5nm)devicesasafunctionofthepositivebiasstress(+BS)time“TheinterfacialITOlayernotonlyprovidesafastcarrierpathbutalsoreducestheinterfacialtrapdensity.”Ji-InKim,K.H.Ji,H.Y.Jung,etc,”Improvementinbo
5、thmobilityandbiasstabilityofZnSnOtransistorsbyinsertingultra-thinInSnOlayeratthegateinsulator/channelinterface”,AppliedPhysicLetters99,122102(2011).文献调研实验进展下一步研究计划文献调研一FIG.4.(Coloronline)(a)The+BSand-BS-inducedVthvariationsfortheZTO/ITOdeviceswithincreasingts.TheevolutionoftheVthvariationsforth
6、e(b)referenceand(c)optimalbi-layerdevicesunderthermalstressfrom298to378K.(d)EAasafunctionofVGSforthereferenceandZTO/ITO(3.5nm)devices.Ji-InKim,K.H.Ji,H.Y.Jung,etc,”ImprovementinbothmobilityandbiasstabilityofZnSnOtransistorsbyinsertingultra-thinInSnOlayeratthegateinsulator/channelinterface”,Appl
7、iedPhysicLetters99,122102(2011).ThenegativeVthshiftwithincreasingmeasurementtemperaturewasattributedtothegenerationofthermallyactivatedcarriersfromthetrapstatesatthegateinsulator/channelorinthebandgapofZTO.Thefallingratesoftheacti
