probabilistic simulation for reliability analysis of cmos vlsi circuits

probabilistic simulation for reliability analysis of cmos vlsi circuits

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时间:2019-03-06

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1、ProbabilisticSimulationforReliabilityAnalysisofCMOSVLSICircuitsbyyzzyFaridN.Najm,RichardBurch,PingYang,andIbrahimN.HajjyzCoordinatedScienceLaboratoryVLSIDesignLaboratoryUniversityofIllinoisatUrbana-ChampaignTexasInstrumentsInc.Urbana,Illinois61801Dallas,Texas75265AbstractAnovelcurrent-estimation

2、approachisdevelopedtosupporttheanalysisofelectromi-grationfailuresinpowersupplyandgroundbussesofCMOSVLSIcircuits.Itusestheoriginalconceptofprobabilisticsimulationtoecientlygenerateaccurateestimatesoftheexpectedcurrentwaveformrequiredforelectromigrationanalysis.Assuch,theapproachispattern-indepe

3、ndentandrelievesthedesignerofthetedioustaskofspecifyinglogicalinputwaveforms.ThisapproachhasbeenimplementedintheprogramCRESTwhichhasshownexcellentaccuracyanddramaticspeedupscomparedtotraditionalapproaches.Wedescribetheapproachanditsimplementation,andpresenttheresultsofnumerousCRESTrunsonrealcirc

4、uits.F.NajmisnowwiththeVLSIDesignLaboratory,TexasInstrumentsInc.,Dallas,Texas75265ThisworkwassupportedbyTexasInstrumentsIncorporated,andtheUSAirForceRomeAirDevelopmentCenter.1IntroductionThereliabilityofintegratedcircuitsisamajorconcernfortheelectronicsindustry.Ashigherlevelsofintegrationareused

5、,theminimumlinewidthandlineseparationwilldecrease,therebyincreasingthechipfailurerate.Thisindicatesthattheimportanceofreliabilitycanonlyincreaseinthefuture.Itis,therefore,imperativethatcircuitsaredesignedwithreliabilityinmind.Thisworkaddresseselectromigration[1,2](EM),whichisamajorreliabilitypro

6、blemcausedbythetransportofatomsinametallineduetotheelectron ow.Underpersistentcurrentstress,thiscancausedeformationsofthemetalleadingtoeithershortoropencircuits.ThefailurerateduetoEMdependsonthecurrentdensityinthemetallinesandisusuallyexpressedasamediantime-to-failure(MTF).Thereisade niteneedfor

7、CADtoolsthatpredictthesusceptibilityofagivendesigntoEMfailures.Asimulationtool,SPIDER[3],hasbeendevelopedtoestimatetheMTFforeachsectionofametalbuscorrespondingtoanyuser-selectedinterconnectsignal.Itrequirestheusertospecifycu

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