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1、附录AFujiIGBTModulesApplicationManualPowerconverters,suchasvariable-speedmotordrivesanduninterruptiblepowersuppliesforcomputers,wererevolutionizedwiththeintroductionofbipolarpowertransistormodulesandpowerMOSFETs.Thedemandforcompact,lightweight,andefficientpowercon
2、vertershasconsequentlyalsopromotedtherapiddevelopmentoftheseswitchingdevices.BipolartransistormodulesandMOSFETshowever,cannotfullysatisfythedemandsofthesepowerconverters.Forexample,whilebipolarpowertransistormodulescanwithstandhighvoltagesandontrollargecurrents,
3、theirswitch-ingspeedisratherslow.Conversely,powerMOSFETsswitchfast,buthavealowwithstandvoltageandcurrentcapacity.Therefore,tosatisfytheserequirements,theinsulatedgatebipolartransistor(IGBT)wasdeveloped.TheIGBTisaswitchingdevicedesignedtohavethehigh-speedswitchin
4、gperformanceandgatevoltagecontrolofapowerMOSFETaswellasthehigh-voltage/large-currenthandlingcapacityofabipolartransistor.ComparesthebasicstructureofanIGBTandapowerMOSFET.TheIGBTischaracterizedbyap+-layeraddedtothedrainsideofthepowerMOSFETstructure.Itisthisp+-lay
5、erthatenablesthevariousIGBTfeaturesexplainedinthismanual.AsshowninFig.1-2,theidealIGBTequivalentcircuitisamonolithicBi-MOStransistorinwhichapnpbipolartransistorandapowerMOSFETaredarlingtonconnected.Applyingapositivevoltagebetweenthegateandtheemitter,awitchesonth
6、eMOSFETandproducealowresistanceeffectbetweenthebaseandthecollectorofpnptransistor,therebyswitchingiton.Whentheappliedvotagebetweenthegaateandtheemitterissetto”0”,theMOSFETwillswitchodd,causingthesupplyofbasecurrenttothepnptransistortostopandtherebyswitchingthato
7、ffaswell.ThismeansthatanIGBTcanbeswitchedonandoffusingvoltagesignalsinthesamewayasapowerMOSFET.LikethepowerMOSFET,apositivevoltagebetweenthegateandtheemitterproducesacurrentflowthroughtheIGBT,switchingiton.WhentheIGBTison,positivecarriersareinjectedfromthep+-lay
8、eronthedrainsideintothen-typebaseslayer,therebyprecipitatingconductivitymodulation.ThisenablestheIGBTtoachieveamuchloweron-resistancethanapowerMOSFET.TheIGBThasaveryl
