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1、------------------------------------------------------------------------------------------------钨含量对磁控溅射铜钨合金薄膜结构和性能的影响_郭中正(1)第35卷第4期2011年4月机 械 工 程 材 料Materials for Mechanical EngineeringVol.35 No.4Apr. 2011钨含量对磁控溅射铜钨合金薄膜结构和性能的影响郭中正,孙勇,周铖,段永华,彭明军(昆明理工大学云南省新材料制备与加工重点实验室,昆明650093)摘 要:用磁控溅射法制
2、备铜钨合金薄膜,采用能谱仪、X射线衍射仪、透射和扫描电镜、电阻计和显微硬度仪等对合金薄膜的成分、结构和性能进行了表征,探讨了钨原子分数的影响。结果表明:含原子分数31.8%～54.8%钨的铜钨膜呈非晶态,表面较平整;含18%和60%钨的膜为晶态,且出现固溶度扩展,分别存在fccCu(W)亚稳过饱和固溶体和bccW(Cu)固溶体,铜钨膜电阻率高于纯铜膜的,非晶铜钨膜电阻率较晶态膜高1.9倍以上;铜钨膜硬度与钨含量呈正相关,非晶及晶态铜钨膜硬度分别低于和略高于Voigt公式的计算值。——————————————————————————————————————---------
3、---------------------------------------------------------------------------------------关键词:铜钨合金;薄膜;固溶度;电阻率;显微硬度中图分类号:TB43;TG146.4文献标志码:A文章编号:1000-3738(2011)04-0020-05InfluenceofWContentonStructureandPropertiesofCu-WAlloyThinFilmsDepositedbyMagnetronSputteringGUOZhong-zheng,SUNYong,ZHOUChe
4、ng,DUANYong-hua,PENGMing-jun(KeyLabofAdvancedMaterialsYunnanProvince,KunmingUniversityofScienceandTechnology,Kunming650093,China)Thecomposition,structureandpropertiesofCu-WthinfilmsfabricatedbymagnetronsputteringAbstract:——————————————————————————————————————------------------------------
5、------------------------------------------------------------------werecharacterizedbyEDX,XRD,TEM,SEM,resistancemeterandmicrohardnessinstrument.TheeffectofWatomfractionwasdiscussed.TheresultsshowthatCu-Wthinfilmswith31.8at%-54.8at%Wwereamorphousandhadsmoothsurface.Thinfilmswith18at%Wand60a
6、t%WwerecrystallinestatewithsolidsolubilityexpansioninthefccCu(W)metastablesupersaturatedsolidsolutionandbccW(Cu)solidsolution,respectively.TheelectricalresistivityofCu-WthinfilmswashigherthanthatofpureCufilms,andtheresistivityofamorphousCu-Wthinfilmswasover1.9timeshigherthanthatofcrystall
7、inefilms.ThemicrohardnessofCu-WthinfilmswascorrelatedpositivelywithWcontent,thehardnessofamorphousandcrystallineCu-WthinfilmswaslowerandslightlyhigherthanthecalculatedvaluesbyVoigtfomula,respectively.Cu-Walloy;thinfilm;solubility;electricalresistivity;microhardnessK
