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时间:2018-09-07
《solutions cmos vlsi design 4th edition odd》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库。
1、SolutionsSolutionsforCMOSVLSIDesign4thEdition.Lastupdated12May2010.Chapter11.1Startingwith100,000,000transistorsin2004anddoublingevery26monthsfor12⎛⎞1212⋅----------------8⎝⎠26yearsgives10•2≈4.6Btransistors.1.3Letyourimaginationsoar!1.5ABCDY1.7AYAY(a)(b)BAABYY(c)
2、BC(d)12SOLUTIONS1.9A1A1A0A0Y0Y1A0A1Y0A2Y2A1Y3Y1A0(a)(b)1.11Theminimumareais5tracksby5tracks(40λx40λ=1600λ2).1.13BAGNDYVDDn+n+n+p+p+nwellpsubstrate1.15ThislatchisnearlyidenticalsavethattheinverterandtransmissiongatefeedbackCHAPTER2SOLUTIONS3hasbeenreplacedbyatris
3、tatefeedabackgate.CLKDYCLKCLKCLK1.17VDDABCDADBCFFCDABGND(a)(b)(c)5x6tracks=40λx48λ=1920λ2.(withabitofcare)(d-e)Thelayoutshouldbesimilartothestickdiagram.1.1920transistors,vs.10in1.16(a).ABAYCBC1.21TheElectriclabsolutionsareavailabletoinstructorsontheweb.TheCaden
4、celabsincludewalkingyouthroughthesteps.Chapter24SOLUTIONS2.1−14WW⎛⎞3.98.8510•⋅⎛⎞W2βμ==CAox()350⎜⎟−8⎜⎟=120μ/VLL⎝⎠10010⋅⎝⎠L2.5V=5gs21.5V=4gs(mA)Ids1V=3gs0.5V=2gsV=1gs0012345Vds2.3Thebodyeffectdoesnotchange(a)becauseVsb=0.Thebodyeffectraisesthethresholdofthetoptran
5、sistorin(b)becauseVsb>0.Thislowersthecurrentthroughtheseriestransistors,soIDS1>IDS2.2.5Theminimumsizediffusioncontactis4x5λ,or1.2x1.5μm.Theareais1.8μm2andperimeteris5.4μm.HencethetotalcapacitanceisC()0V==()1.8()0.42+()5.4()0.332.54fFdbAtadrainvoltageofVDD,thecap
6、acitancereducesto5–0.445–0.12C()5V==()1.8()0.42⎛⎞1+----------+()5.4()0.33⎛⎞1+----------1.78fFdb⎝⎠0.98⎝⎠0.982.7Thenewthresholdvoltageisfoundas17210•φ=20026(.)ln=085.Vs1014510.•−810010•−−19141712/γ=221610()..•()11788510••.()210•=075.V−143988510..••V=+07.γφ()+441−φ
7、=.66VtssThethresholdincreasesby0.96V.CHAPTER3SOLUTIONS52.9ThethresholdisincreasedbyapplyinganegativebodyvoltagesoVsb>0.2.11ThenMOSwillbeOFFandwillseeVds=VDD,soitsleakageis−VtIIv==β218e.envT=69pAleakdsnT2.13AssumeVDD=1.8V.Forasingletransistorwithn=1.4,−+VVtDηDI==
8、Ivβ21.8eenvT=499pAleakdsnTFortwotransistorsinseries,theintermediatevoltagexandleakagecurrentarefoundas:−+Vxtη⎛⎞−xη(VxVxDD−)−−tI=−ββvee21.8nvTT⎜⎟1ev=vee21.8nvTleakT⎜⎟T
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