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1、Nature：柔性GaAs半导体的制备方法虽然像砷化镓这样的化合物半导体在光伏电池和光电应用中与硅相比有很大的性能优势，但这些优势并不能超过生成这些材料的大型高质量层状结构、并将它们转移到柔性或透明基质上、用在如太阳能电池、夜视照相机和无线通信系统等设备中所涉及的高成本过程（所体现出的劣势）。然而现在，JohnRogers及其团队演示了一个新的制造方法，它能克服这一缺点。他们是在一个单一沉降序列中、在厚的、多层组合体中来生长GaAs和AlGaAs薄膜的，然后将各层薄膜释放，通过印刷方式使其分布在异质基质上。.这一策略对于大面积应用的技术潜力，通过如以玻璃为基质的
2、场效应晶体管和以塑料为基质的光伏电池模块等GaAs装置的制造得到了演示。GaAsphotovoltaicsandoptoelectronicsusingreleasablemultilayerepitaxialassembliesJongseungYoon1,5,SungjinJo1,4,5,IkSuChun2,InhwaJung1,Hoon-SikKim1,MatthewMeitl3,EtienneMenard3,XiulingLi2,JamesJ.Coleman2,UngyuPaik4&JohnA.Rogers1,2DepartmentofMaterials
3、ScienceandEngineering,BeckmanInstituteforAdvancedScienceandTechnology,andFrederickSeitzMaterialsResearchLaboratory,UniversityofIllinoisatUrbana-Champaign,Urbana,Illinois61801,USADepartmentofElectricalandComputerEngineering,UniversityofIllinoisatUrbana-Champaign,Urbana,Illinois61801,U
4、SASemprius,Inc.,Durham,NorthCarolina27713,USADivisionofMaterialsScienceEngineering,WCUDepartmentofEnergyEngineering,HanyangUniversity,Seoul133-791,SouthKoreaTheseauthorscontributedequallytothiswork.Compoundsemiconductorslikegalliumarsenide(GaAs)provideadvantagesoversiliconformanyappl
5、ications,owingtotheirdirectbandgapsandhighelectronmobilities.Examplesrangefromefficientphotovoltaicdevices1,2toradio-frequencyelectronics3,4andmostformsofoptoelectronics5,6.However,growinglarge,highqualitywafersofthesematerials,andintimatelyintegratingthemonsiliconoramorphoussubstrat
6、es(suchasglassorplastic)isexpensive,whichrestrictstheiruse.Herewedescribematerialsandfabricationconceptsthataddressmanyofthesechallenges,throughtheuseoffilmsofGaAsorAlGaAsgrowninthick,multilayerepitaxialassemblies,thenseparatedfromeachotheranddistributedonforeignsubstratesbyprinting.
7、Thismethodyieldslargequantitiesofhighqualitysemiconductormaterialcapableofdeviceintegrationinlargeareaformats,inamannerthatalsoallowsthewafertobereusedforadditionalgrowths.Wedemonstratesomecapabilitiesofthisapproachwiththreedifferentapplications:GaAs-basedmetalsemiconductorfieldeffec
8、ttransistors
