introduction to flash memory

introduction to flash memory

ID:20790501

大小:2.12 MB

页数:73页

时间:2018-10-15

introduction to flash memory_第1页
introduction to flash memory_第2页
introduction to flash memory_第3页
introduction to flash memory_第4页
introduction to flash memory_第5页
资源描述:

《introduction to flash memory》由会员上传分享,免费在线阅读,更多相关内容在教育资源-天天文库

1、IntroductiontoFlashmemoryIvanChenTopicsFlashmemoryoverviewNorflashandubootdriverNandflashandubootdriverSPIflashandubootdriverMulti-mediacard(MMC)Securedigitalcards(SD)FlashmemoryoverviewFlashmemoryisanon-volatilecomputerstoragechipthatcanbeelectricallyerasedandreprogrammed.It’spr

2、imarilyusedinmemorycards,USBflashdrivers,MP3playersandsolid-statedrivesforgeneralstorageandtransferofdatabetweencomputersandotherdigitalproducts.Flashmemoryoverview(History)Flashmemory(bothNORandNAND)wasinventedbyDr.FujioMasuokawhileworkingforToshiba1980.Intelintroducedthefirstco

3、mmercialNORtypeflashchipin1988.NOR-basedflashhaslongeraseandwritetimes,butprovidesfulladdressanddatabuses.ToshibaannouncedNANDflashatthe1987.Ithasreducederaseandwritetimes,andrequireslesschipareaandcell,thusallowinggreaterstoragedesityandlowercostperbitthanNORflash,howevertheI/Oi

4、nterfaceofNANDflashdoesnotprovidearandomaccessexternaladdressbus.FlashmemoryprincipleFlashmemoryprincipleTheinformationisstoredinFlashmemoryasanarrayoffloatinggatetransistors,called“cells”,eachofwhichstoresonebitofinformationtraditionally,Newerflashmemorydevices,referredtoasmulti

5、-levelcelldevices,canstoremorethan1bitpercellbyvaryingthenumberofelectronsplacedonthefloatinggateofacell.Flashmemorycellfunctionsbystoringchargeinthefloatinggate,thepresenceofchargewillthendeterminewhetherthechannelwillconductornot.Duringthereadcyclea“1”attheoutputcorrespondingto

6、thechannelbeinginitslowresistanceorONstate.Thecontrolgateisusedtochargeupthegatecapacitanceduringthewritecycle.Flashmemoryoverview(features)ArrangedintoblocksEachbitinacleanflashchipwillbesettoalogicalone,andcanbesettozerobyawriteoperation.Resettingbitsfromzerotoonecannotbedonein

7、dividually,butonlybyresettingacompleteblock.Memorywear:hasafinitenumberofprogram-erasecycles.(shouldupdateoutofplaceinsteadofinplace)NORvsNANDNORvsNANDOnenandflashDevelopedbySamsungContainraminsidetoemulateNORinterface,whichcombinetheadvantagesofNORandNANDContainbadblockmanagemen

8、tunitinsideRead:sendareadcmdanddirectlyr

当前文档最多预览五页,下载文档查看全文

此文档下载收益归作者所有

当前文档最多预览五页,下载文档查看全文
温馨提示:
1. 部分包含数学公式或PPT动画的文件,查看预览时可能会显示错乱或异常,文件下载后无此问题,请放心下载。
2. 本文档由用户上传,版权归属用户,天天文库负责整理代发布。如果您对本文档版权有争议请及时联系客服。
3. 下载前请仔细阅读文档内容,确认文档内容符合您的需求后进行下载,若出现内容与标题不符可向本站投诉处理。
4. 下载文档时可能由于网络波动等原因无法下载或下载错误,付费完成后未能成功下载的用户请联系客服处理。