zno al透明导电薄膜的自由基辅助磁控溅射制备工艺及性能表征

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1、摘要(1)金属Zn溅射靶材表面氧化状态的改变是引起溅射工艺不稳定的主要原因。样品鼓转速的变化可以改变真空室内的氧气分布，引起靶材表面状态的改变，从而导致放电电压的变化。(2)AZO薄膜的透过率与薄膜的氧化程度密切相关，而Al的有效掺杂是决定AZO薄膜导电性的重要影响因素：AZO薄膜载流子迁移率的大小取决于薄膜的中性杂质浓度的大小。(3)利用磁控溅射获得的AZO薄膜，在氢气气氛中经550oC退火处理后，样品的电阻率达到6．45×10。4Q·cm，550nm波长的透射率达到85．7％，达到了可实用的技术指标。关键词：透明导电薄膜、ZnO

2、：AI、AZO、载流子浓度、迁移率、中性杂质散射、掺杂效率、退火处理IIAbstractAbstractTransparentconductiveZnO：A!(AZO)filmwasusedinthefieldsofsolarcellsandflatpaneldisplay,becauseofitsexcellentelectricalandopticalproperties．AZOfilm，withtheadvantagesofcheapandabundantrawmaterials，andnon-toxic，isconsider

3、edtobethebestcandidatesforsubstitutingITOfilms．Radicalassistedmagnetronsputteringcoater(RASforshort)isanewtypeofcoater．ARAShastheadvantagesofhighdepositionrate，lowCOStandmassproductionability．Therefore，studiesonthefabricationprocessesofAZOfilmsareveryimportantforindust

4、rialapplications．Thisdissertationstudiedtheinfluencesoftargets，oxygenpartialpressure，A1content，sputteringpowerandpost-annealingtreatmentonthepropertiesofAZOfilms．ProcessparametersoffabricatingAZOfilmsbyR．ASwerestudied，andtheobtainedAZOfilmswerecharacterized．Thedisserta

5、tionconsistsoffivechapters：InChapter1，transparentconductivefilmsandtheresearchhistorywerebrieflyintroduced．MethodsoffabricatingZnO：AIfilmsandtheadvantagesofAZOfilmsdepositedbyRASalsoweregiven．Factorswhichaffectingthestabilityofdischargevoltageduringdepositionprocessesw

6、erealsointroduced．InChapter2，weintroducedthebasicprincipleandmainparametersoftheRASsputteringcoater,aswellasthedepositionparametersofAZOsamples．Thevariouscharacterizationtechniques，includingXRD、SEM、XRF、UV-Vis—IR、XPS、VanderPauwmethodetc．werealsointroducedInChapter3，effe

7、ctsofoxygenflowrateonthedischargevoltageofZntargetandA1target，andtherotationspeedofthesampledrumonthestabilityofdischargevoltagewerestudied．InChapter4，theprocessesoffabricatingAZOfilmsbyZnandAItargetswerestudied．TheeffectsofAIcontent，oxygenpartialpressure(bychangingthe

8、Arflowrateoroxygenflowrate)andpost-annealingtreatmentontheelectricalandopticalpropertiesofAZOfilmswereinvestigated．ⅡI