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1、fanciulliv.2009/01/21,v1.7Prn:23/01/2009;15:51F:fanciullipre.tex;VTEX/p.11Preface12233445566778899101011Thespindegreeoffreedomisofferingawiderangeofintriguingopportunities1112bothinfundamentalaswellasappliedsolidstatephysics.Whencombined1213withtherichandfertilephysic
2、soflowdimensionalsemiconductingstructures1314theplaygroundforthescientistsbecomesextremelyexcitingandinteresting.14151516AgrateBrianza,MarcoFanciulli1617January20091718181919202021212222232324242525262627272828292930303131323233333434353536363737383839394040414142424
3、34344444545fanciulliv.2009/01/20,v1.6Prn:21/01/2009;9:40F:fanciulli01.tex;VTEX/p.11ResistivelyDetectedESR122andENDORExperiments334inNarrowandWideQuantumWells:455AComparativeStudy667781128JoshuaD.Caldwell,CliffordR.Bowers,andGuennadiiM.Gusev99101DepartmentofChemistryan
4、dNationalHighMagneticFieldLab,University1011ofFlorida,Gainesville,FL32611-7200,USA1112russ@ufl.edu12213InstitutodeF´ısica,UniversidadedeS˜aoPaulo,CaixaPostal66318,05315-970,1314S˜aoPaulo,SP,Brazil14151516Abstract.Resistivelydetectedelectronspinresonanceandelectronnucl
5、ear1617doubleresonancespectrahavebeenacquiredinthelowestelectronicsubband1718ofaremotelySi-doped400nmwideGaAs/AlAsdigitalparabolicquantum1819wellinhighparallelandperpendicularmagneticfieldsattemperaturesinthe19200.5–10Krange.Thetemperaturedependencesoftheg-factor,esrl
6、inewidth,2021lineamplitudeandnuclearspinrelaxationtimes,acquiredinthetwodifferent2122orientations,arecomparedtodataobtainedpreviouslyina30nmGaAs2223quantumwellwithsimilarelectrondensityandmobility.2324242525261Introduction26272728Inaparabolicquantumwell(PQW)formedbyan
7、AlAs/GaAsdigitalsuper-2829lattice,thealuminumfractioninthecenterofthewelliszerobutincreases2930alongthegrowthdirectiontowardeachbarrier,yieldingaparabolicconduc-30231tionelectronpotentialV(z)=(az).Suchquantumstructureshaveseveral3132interestingpropertiesthatmightprov
8、eadvantageousforspin-baseddevices.3233Forexample,ithasbeenshownthattheelectrondensityinthePQWcan3334beshiftedsubstantiallyatrelativ
