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1、ᜧắ ᦻ0.13ᒹ ◍⚪ḄắẆᗩ 1102102063 :ᩋ!"ᦟᣴ% ℏᜩᓄᵭ* +,ắ -.ᡂᵯ1,ᡠᙠᓫ+:ᵯ5 ▾789:：2013<5ᨴᣴ> +ᓫ+?@ABᜧ 万方数据?@ABᜧ ắ +DᦻíÍî.úGᓄᵯA/.Ḅ⇨ H᳛，ᦋJᨵ§A/.（BARC)ḄLM，ᦋXwḄᵯ1NOḄ» ᑣ，ï?ᩭR@ᒹ ◍（bubbledefect)Ḅ，ÿõwÕᱏḄST᳛，UêwḄV᳛ᐵæW：、ᒹ◍、&ᓄấ、⇨ ᳛Ii万方数据?@ABᜧ ắ +DᦻThesol
2、utiontothebubbledefectproblemin0.13"mcopperinterconnectionprocessABSTRACTAccordingtoMoorelaw,thecircuitnumbersinICwilldoubleevery18months,somorethecircuitnumbersare,smallerthescaleofsemiconductordevicewillbe.Whenthecriticalsizebecomessmaller,therequesttotheICmanufacturew
3、illbehigher.Thusthecopperlineinsteadofalumnumlineistheinevitableresult,andusinglowKdielectricmaterial,thedelaythatcausedbythemettllinehavebeenreducedtoanaccepttblelevel.Damascusprocesssolvedtheproblemofcopperetching,andthescaleofsemiconductordevicebecomesmallerandsmaller
4、.Thisarticleanalyzestherootcausetosolvethebubbledefectin0.135mcopperinterconnectiontechnology.Andwefindthetheoryfortheoccurrenceofthebubbledefectbyinlinedefectscan,SEMcut,andverifythefeasibilityandreliibilitythroughtheexperimentdattcollectionandanalysis.SINfilmworksasthe
5、etchstopllyerinCuinterconnectDamascustechnology,highstresscombinedwiththethermalandetcheffectsintheiii万方数据?@ABᜧ ắ +Dᦻprocess,inducedSINpeelingfromtheIMDfilmandformingthebubbledefect.Thisarticledescribesthreesolutions:modifyandcontrolIMDlayeretchrate,changeBARCdeposition
6、methodfromonesteptotwostep,andaddonedesignrulecheckfornewproducttapeout,thesethreemethodscanavoidtheoccurrenceofbubbledefect,thusreducethewaferscraprateandimprovetheproductyield.KEYWORDS:Cuinterconnect,bubbledefect,SIN,EtchrateIV万方数据?@ABᜧ ắ +Dᦻ.......................
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