双极型晶体管工艺流程简介

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1、TheBriefProcessoftheBipolarJunctionTransistor双极型晶体管工艺流程简介WaferstartThefirsttimeoxidationTheSi3N4depositionOxide/diffusionfurnacetogrowoxidationlayeranddiffusetheimpuritiesSuper-soniccleanertocleanthewaferPECVDtodepositSi3N4thinfilmsSpinningandcoatingThefirstexposureThespin

2、coatertodepositPhotoresists、BandPgelsOpticalstepperforalignmentandexposureResistdevelopEtchingspinning-coatingB-geltoformtheP+shellringThermaldiffusiontheoxideandSi3N4RemovalThesecondoxidationThesecondexposureResistdevelopEtchingSpinning-coatingP-geltoformtheN-regionasColl

3、ectorP-gel、oxideandSi3N4RemovalThethirdexposureResistdevelopEtchingSpinning-coatingB-gelandthermaldiffusiontoformtheP+regionasBasetheoxideandSi3N4RemovalThefourthexposureResistdevelopEtchingSpinning-coatingP-gelandthermaldiffusionTheoxidationandtheSi3N4depositiontoformtheo

4、hmcontactandn+EmissionregionThefifthexposureResistdevelopEtchingSpinning-coatingB-gelandthermaldiffusiontotheB-gelRemovalThesixthexposureformtheP+ohmcontactResistdevelopSputteringAlascontactEtchingAltoformtheE、B、Ccontact