半导体器件物理与工艺参考答案

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1、ContentsCh.1Introduction---------------------------------------------------------------------0Ch.2EnergyBandsandCarrierConcentration--------------------------------------1Ch.3CarrierTransportPhenomena--------------------------------------------------7Ch.4p-nJunction----------

2、----------------------------------------------------------16Ch.5BipolarTransistorandRelatedDevices----------------------------------------32Ch.6MOSFETandRelatedDevices-------------------------------------------------48Ch.7MESFETandRelatedDevices-------------------------------

3、------------------60Ch.8MicrowaveDiode,Quantum-EffectandHot-ElectronDevices---------------68Ch.9PhotonicDevices-------------------------------------------------------------73Ch.10CrystalGrowthandEpitaxy---------------------------------------------------83Ch.11FilmFormation---

4、-------------------------------------------------------------92Ch.12LithographyandEtching------------------------------------------------------99Ch.13ImpurityDoping---------------------------------------------------------------105Ch.14IntegratedDevices------------------------

5、-------------------------------------1130CHAPTER21.(a)FromFig.11a,theatomatthecenterofthecubeissurroundbyfourequidistantnearestneighborsthatlieatthecornersofatetrahedron.Thereforethedistancebetweennearestneighborsinsilicon(a=5.43Å)is221/21/2[(a/2)+(2a/2)]=3a/4=2.35Å.(b)Forthe

6、(100)plane,therearetwoatoms(onecentralatomand4corneratomseachcontributing1/4ofanatomforatotaloftwoatomsasshowninFig.4a)2foranareaofa,thereforewehave2-821422/a=2/(5.43×10)=6.78×10atoms/cmSimilarlywehavefor(110)plane(Fig.4aandFig.6)2152(2+2×1/2+4×1/4)/2a=9.6×10atoms/cm,andfor(1

7、11)plane(Fig.4aandFig.6)æ3ö2142(3×1/2+3×1/6)/1/2(2a)(ç÷a)==7.83×10atoms/cm.è2øæç3ö÷2aç2÷èø2.TheheightsatX,Y,andZpointare31and3.4,4,43.(a)Forthesimplecubic,aunitcellcontains1/8ofasphereateachoftheeightcornersforatotalofonesphere.4Maximumfractionofcellfilled=no.ofsphere×volumeo

8、feachsphere/unitcellvolume33=1×4ð(a/2)/a=52%(b)Foraface-centeredcubi