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1、StaticandDynamicBehaviorofMemoryCellArrayOpensandShortsinEmbeddedDRAMsZaidAl-ArsAdJ.vandeGoorSectionComputerEngineering,FacultyofInformationTechnologyandSystemsDelftUniversityofTechnology,Mekelweg4,2628CDDelft,TheNetherlandsE-mail:z.e.al-ars@its.tudelft.nlAb
2、stract:FaultanalysisofmemorydevicesusingdefectferredtoasdynamicFFMs,thatareespeciallyimportantinjectionandsimulationisbecomingincreasinglyimpor-forDRAMs.tantasthecomplexityofmemoryfaultybehaviorincreases.Thispaperestablishesallstaticandanumberof2-Inthispaper
3、,thisapproachisusedtostudytheeffectsoperationdynamicFFMsinthememorycellarrayofanofopensandshortsonthefaultybehaviorofembeddedeDRAM,byinjectingelectricalopenandshortdefectsintoDRAM(eDRAM)devicesproducedbyInfineonTechnolo-theelectricalmodelofaneDRAM.Theimpactof
4、bridgegies.Theanalysisshowstheexistenceofpreviouslyde-defectsonthebehavioroftheeDRAMmemorycellarrayfinedmemoryfaultmodels,andestablishesnewones.Thehasalreadybeenanalyzed[Al-Ars00].Naik[93]hasusedpaperalsoinvestigatestheconceptofdynamicfaultybe-thisapproachfor
5、staticFFMsinSRAMs,whileNagi[96]haviorandestablishesitsimportanceformemorydevices.hasappliedittomoregeneralelectricaldevices.ConditionstotestthenewlyestablishedfaultmodelsareThispaperisorganizedasfollows.Section2describesalsogiven.theusedeDRAMsimulationmodel,
6、thenSection3definesKeywords:EmbeddedDRAM,functionalfaultmodels,thestaticanddynamicFFMstargetedinthispaper.InSec-faultprimitives,defectsimulation,opens,shorts.tion4,thedefectstobeinjectedintothesimulationmodelaredefinedandclassified.Section5givesthemethodologyto
7、beusedforperformingthesimulationsandextracting1IntroductiontheFFMs.Section6discussesthesimulationresults,andSection7usestheseresultstoderivedetectionconditionsThecontinuedincreaseintheintegrationdensityofICsandextendcurrentfunctionalteststodetectthedynamicha
8、smadeitpossibletouseon-chipdynamicRAMcores,faultybehavior.Finally,Section8endswiththeconclu-referredtoasEmbeddedDRAMs(eDRAMs),alongwithsions.otherelectricalcomponents.Ontheonehand,eDRAMshavemany
