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1、ElectronicstructureandeffectivemassesofInNunderpressureI.Gorczyca,J.Plesiewicz,L.Dmowski,T.Suski,N.E.Christensen,A.Svane,C.S.Gallinat,G.Koblmueller,andJ.S.SpeckCitation:JournalofAppliedPhysics104,013704(2008);doi:10.1063/1.2953094Viewonline:http://dx.doi.org/10.1063/
2、1.2953094ViewTableofContents:http://scitation.aip.org/content/aip/journal/jap/104/1?ver=pdfcovPublishedbytheAIPPublishing[Thisarticleiscopyrightedasindicatedinthearticle.ReuseofAIPcontentissubjecttothetermsat:http://scitation.aip.org/termsconditions.Downloadedto]IP:2
3、22.178.10.244On:Thu,02Jan201404:17:33JOURNALOFAPPLIEDPHYSICS104,0137042008ElectronicstructureandeffectivemassesofInNunderpressure1,a11122I.Gorczyca,J.Plesiewicz,L.Dmowski,T.Suski,N.E.Christensen,A.Svane,333C.S.Gallinat,G.Koblmueller,andJ.S.Speck1InstituteofHighPre
4、ssurePhysics,PolishAcademyofSciences,Warsaw,Poland2DepartmentofPhysicsandAstronomy,UniversityofAarhus,DK-8000AarhusC,Denmark3MaterialsDepartment,UniversityofCalifornia,SantaBarbara,California93106-5050,USAReceived22February2008;accepted7May2008;publishedonline8July2
5、008ThepressuredependenceoftheelectronicbandstructureofInNisinvestigatedwithemphasisontheconductionbandeffectivemassanditsdependenceonfree-electronconcentration.Transportmeasurementsareperformedunderhydrostaticpressureonthreen-typesamplesofInNwithdifferentelectroncon
6、centrations.Theeffectivemassextractedfromtheelectronmobilityisfoundtoincreasewithpressure,howeverwithapressurecoefÞcient,whichislowerforthesampleswithhigherelectronconcentration.CalculationsoftheInNbandstructureareperformedwithinthedensityfunctionaltheorybymeansofthe
7、linearmufÞn-tin-orbitalmethod,includinganempiricaladjustmenttoreproduceknownbandedgesatambientpressure.Thecalculatedvariationsofthehighestoccupiedconductionbandenergyandtheelectroneffectivemasswithfree-electronconcentrationarecomparedtoavailableexperimentalinformatio
8、n.Theresultsshowapronounceddeviationfromparabolicbehaviorofthelowestconductionband,andfork0thisinduceslargedifferencesbetweentheva
