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1、ARTICLEINPRESSSolarEnergyMaterials&SolarCells91(2007)1688–1691www.elsevier.com/locate/solmatAmodelfordistributionofoxygeninmulticrystallinesiliconingotgrownbydirectionalsolidificationa,b,caaaZhenqiangXi,JunTang,HaiDeng,DerenYang,DuanlinQueaStateKeyLaboratoryofSilicon
2、Materials,ZhejiangUniversity,Hangzhou310027,PRChinabCenterofMaterialsEngineering,ZhejiangSci-TechUniversity,Hangzhou310018,PRChinacChinaNationalPVTechnologyDevelopmentCenter,Hangzhou310012,PRChinaReceived2October2006;accepted17May2007Availableonline3July2007AbstractA
3、model,includingsegregationfromsiliconmelttosiliconcrystalaswellasevaporationfromsiliconmelttoAratmosphere,wasestablishedforsimulatingtheoxygendistributioninmulticrystallinesilicon(mc-si)ingot,whichshowsgoodagreementwiththeexperimentalresults.Accordingtothismodel,theo
4、xygendistributioninthebottomofingotismainlydeterminedbytheevaporationofoxygen,whereasthatinthetopofingotisdominatedbythesegregationofoxygen.Furthermore,itcouldbefoundthattheOiprofilesingrowthdirectionofingotsbecomemoreandmoresteeperwiththeincreaseoftheexponentX.r2007P
5、ublishedbyElsevierB.V.Keywords:Multicrystallinesilicon;Directionalsolidification;Oxygen;Simulation1.Introductionmoltensiliconisneeded.ThetransportationofoxygenduringCzochralskisiliconcrystalgrowthisawellOxygenconcentrationanditsspatialdistributionindocumentedsubject[5
6、,6].However,uptonow,themulti-crystallinesilicon(mc-si)crystalisoneofthemostbehaviorofoxygentransferandspatialdistributionduringimportantfactorsgoverningcrystalquality[1].Themc-sicrystalgrowthhasbeenlessstudied.Theinterstitialdegradedregionsatthebottomofmc-siingots,wh
7、ichoxygenprofileinverticalandhorizontaldirectionofacasthastobediscardedduetoexcessivelowminoritycarriermc-sicrystalisusuallydescribedasasegregation-lifetime,isalsosupposedtoresultfromhigherconcentra-controlledprofile,butanobviousmismatchexistsbetweentionoxygenoroxygenr
8、elateddefects[2].Theelectricallyrealoxygendistributionandsimulativeprofile[7].Infact,activeoxygencomplexes(precipitates,donors,etc.)
