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1、1InvestigationofParasiticE®ectsInducedbytheGroundonLTCCPassiveComponentsRuniuFang1,MinMiao1;2,andYufengJin11NationalKeyLaboratoryofScienceandTechnologyonMicro/NanoFabricationPekingUniversity,Beijing,China2InstituteofInformationMicrosystem,BeijingInforma
2、tionScienceandTechnologyUniversity,ChinaAbstract
3、Inthispaper,theground-inducedparasitice®ectsonLTCCcapacitorsandin-ductorsarestudied.Onthebasisoftheproposedcircuitmodels,thee®ectsarediscussedandexplained,andtheresultsareveri¯edbytheFEAsimulation.Interms
4、ofcapacitors,thegroundmayserveforanextraelectrode,couplewiththeexistingones,andcausediscrepancybetweene®ectivecapacitanceseenatdi®erentports.Forinductors,theintroductionofgrounddecreasesboththee®ectiveinductanceandthequalityfactorduetogreatnegativemutua
5、linductanceinducedintothecomponent,andforbothpassivecomponents,thesee®ectsaremoreobviouswithacloserproximityoftheground.1.INTRODUCTIONInthepastdecade,LTCC(LowTemperatureCo-¯redCeramic)basedmoduleisconsideredasanalternativeforthetraditionalsilicon-basedR
6、Fmodule,withlowercostandhigherqualityfactor.MultilayerLTCCintegratedpassiveshavebeendemonstratedasafavorableoptiontorealizepassivesofbothhighinductanceorcapacitanceandhighqualityfactor[1].Theincreasingoperationfrequencyanddemandofhighdensityintegrationo
7、fRFmodulescauseseverecouplingandcrosstalkproblemsbetweencomponents,whichcanbedissipatedtoagreatextentbyinsertinggroundplanes.Therefore,e®ectsofgroundplanesonLTCCpassives,mainlycapacitorsandinductors,needtobeinvestigated.[2]presentsathoroughlystudyonLTCC
8、passivelibrary,inwhichtheground-inducede®ectoninductorsisconcluded.However,themechanismbehindtheconclusionisnotwellexplained.Besides,thee®ectsoncapacitorsisnotinvestigated.Inthispaper,theground-inducedparasitice®ectsonLTCCcapacitorsandinductorsarediscus
9、sedandexplainedrespectively.Intermsofcapacitors,theground-inducede®ectscausethediscrepancybetweene®ectivecapacitanceseenatdi®erentports.Thecouplingbetweentheelectrodeofthecapacitorandthegroundaddstothee®ectivecapacitance,andisstr
