AES Training Material.pdf

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AAEESSIInnttrroodduuccttiioonn

MaterialScienceLab.MMaaiinnCCoonntteenntt1.AESbasicprinciples2.BriefcomparisonbetweenAES,XPS&EDX3.Equipmentconstitution3.1Hardwareconstitut

2、ion3.2Softwareconstitution4.AESworkmodes5.Samplerequirements6.SomeinterestingcasesBBaassiiccKKnnoowwlleeddggeeQualitativeanalysisAES:AugerElectronSpectroscopy(
)SemiquantitativeQualitativeanalysisXPS(ESCA):X-rayPhotoelectronSpectroscopy(X-)Quantitativ

3、e(ESCA
:ElectronSpectroscopyforChemicalAnalysis()BBaassiiccPPrriinncciipplleessTwoRelaxationProcessesforExcitedIonAugerElectron(a)(b)PhotonElectronEkllEfEfLIIILIII2P2PLIILIIIncidentparticleIncidentparticle2SLI2SLI1SK1SKRelaxationProcesses:1.Augerelectronem

4、ission:Forlowatomicnumber(<30)withinitialvacancyinKshell,andforallelementswithinitialvacancyinLshell,Augerelectronemissionwasthemostlikelyrelaxationprocess2.PhotoElectronemission:othersituationsE-----KineticEnergykEk(z)=E(z)-E(z)-E*(z)-¢ABCSBBaassiiccPPrriinnccii

5、pplleessAtomicNo.Transitiontype3-10KLL11-19KLL+LMM20-36LMM37-52LMM+MNN53-MNNAAbboouuttAAEESSeelleeccttrroonnEEssccaappeeDDeepptthhInelasticMeanFreePath(Attenuationlength)Signalsource)50A(10A63.2%tha4086.5%20A95%peeAlCu30Ar30fAunae50A20mctis10laeIn0500100015002000

6、2500Electronenergy(eV)CCoommppaarriissoonnwwiitthhXXPPSS&&EEDDXXItemsAES(25kV)XPSEDX(15kV)IncidentparticlesElectronX-rayElectronTestsignalAugerEPhotoelectronX-rayBeamsize10nm10um10nmEresolution6ev0.45ev133evSpaceresolution8nm>10um1.7nmTestdepth~5nm~5nm~1-3umAnaly

7、zerCylindermirrorhemisphereSi(Li)Limitation%~0.1%~0.1%~0.1%Analysiselement>=LiAll>=BAnalysistypeSemi-QuantitativeSemi-EEqquuiippmmeennttCCoonnssttiittuuttiioonn--------HHaarrddwwaarreeFieldEmissionElectronSourceMulti-ChannelDetectorCylindricalMirrorAnalyzerIonGu

8、nSampleAESEEqquuiippmmeennttCCoonnssttiittuuttiioonn--------HHaarrddwwaarree----AbouttheAriongun1.Sputter(profile)2.ForSiO,2kV1uA1x1,v=17.33nm/min2ForpureAu,2k