[工学]数字电子技术课件lec

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1、2021/8/5Chapter12IntegratedCircuitTechnologies1Lecture29OutlineLecture29MOStransistorandCMOSdeviceDiodeAND,ORgateanditscharacteristics；MOStransistorconstructionandprinciple；MOStransistorinput/outputcharacteristics；MOStransistorequivalentswitchingcircuit；CMOSinvertercircuitandworkingpr

2、inciple；Inputnoisemargin(输入噪声容限)；CMOSinverterstaticinput/outputcharacteristics；CMOSinverterdynamiccharacteristics。2021/8/5Chapter12IntegratedCircuitTechnologies2Semiconductorbasicsreview（1）Intrinsicsemiconductor：pureandwithcrystalstructure。Commoninuse：硅Si，锗GeTwocarriersWhenunstimulate

3、d,nofreeelectronWhenstimulatedgeneratesfewhole-electronpair.CovalentbondsHoleelectronLecture29MOStransistorandCMOSdevice2021/8/5Chapter12IntegratedCircuitTechnologies3Semiconductorbasicsreview（2）加入磷锑等杂质Majoritycarrier：自由电子Minoritycarrier：空穴Lecture29MOStransistorandCMOSdeviceDopedsemic

4、onductorsN-typesemiconductorsDonorimpurity2021/8/5Chapter12IntegratedCircuitTechnologies4Semiconductorbasicsreview（2）DopeboronMajoritycarrier：空穴Minoritycarrier：自由电子Lecture29MOStransistorandCMOSdeviceDopedsemiconductorsP-typesemiconductorsacceptorimpurity2021/8/5Chapter12IntegratedCirc

5、uitTechnologies5Semiconductorbasicsreview（3）Diffusion:NregionelectronsmovetoPregion,PregionholesmovetoNregion.Drift:NregionholesmovetoPregion,PregionelectronsmovetoNregion.Thistwomotionsreachesdynamicequilibriumfinally.Lecture29MOStransistorandCMOSdeviceFormationofpnjunctionSpace-char

6、geregion（depletionregion）Diffusionanddrift2021/8/5Chapter12IntegratedCircuitTechnologies6Semiconductorbasicsreview（4）UnidirectionalconductanceofPNjunctionForwardbiasExternalfieldcancelintrinsic,makingdepletionlayerthinner，breakingupdynamicequilibrium,diffusionresumes,generatingcurrent

7、.Lecture29MOStransistorandCMOSdevice2021/8/5Chapter12IntegratedCircuitTechnologies7Semiconductorbasicsreview（4）UnidirectionalconductanceofPNjunctionReversebiasExternalfieldstrengthenintrinsic,depletionlayerthicker,blockingmajoritycarriertodiffuse,butstrengthenminoritycarrierdrifting,s

8、other