硅衬底GaN基发光二极管设计与外延生长

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1、中山大学博士学位论文硅衬底GaN基发光二极管设计与外延生长姓名：招瑜申请学位级别：博士专业：光学指导教师：王钢20100430硅衬底GaN基发光二极管设计与外延生长氧化铝和激光全息的方法，分别在硅衬底上制作出周期约为100nnl和850nm，孔洞直径大小约为80am和400nm的掩模。关键词：发光二极管，硅衬底，光子晶体Vl中山大学博士学位论文Title：DesignandEpitaxialGrowthofGaNbasedlightemittingdiodesonsiliconsubstrateMajor：OpticsName：YUZhaoSupervisor：Prof．

2、GangWangABSTRACTLightemittingdiodes(LEDs)，asreferredtobethe“ultimatelamp”forfuture，hasadvancedtremendouslyinthelasttwodecades．Owingtoitslowpowerconsumption，longlifetimeandenvironmentfriendly，LEDshasgaingreatattentionandsupportfromgovernmentsandorganizationsallaroundtheworld．Siliconisthemo

3、stwidelyusedsemiconductormaterial，thefavorablepropertiesofsilicon，suchashighlythermalandelectricalconductive，highquality，largesize，lowcostmakeitaveryattractivesubstrateforGaN—baseddevices．msalsoopensaroutetowardsanintegrationoflightemittersandhighspeedelectronicswithSitechnology．However，t

4、helargelatticeandthermalmismatchbetweensiliconandGaNhindersthegrowthoflli曲-qualityGaNthickfilm．TremendouseffortsareneededtoaddressthemanytechnicalissuesintheepitaxyofIII-nitridematerialonsilicon．ResearchlabsfromhomeandabroadaretakinggreatpaininenhancingthequalityofGaNandfabricatinghighbri

5、ghtnessLEDsonsilicon．BreakthroughsinsuchfieldwillbenefittherapiddevelopmentofLEDsindustry．Inthisthesis，researchisfocusonthedesignandepitaxialgrowthofGaNbasedLEDsonsiliconsubstrate．Wetheoreticallyinvestigatetheutilizationofphotoniccrystal(PC)stnIcturetoenhancetheextractionefficiencyofLEDso

6、nsilicon．WealsoexperimentallystudiedtheinfluenceofbufferlayerandinterlayertotheGaNfilmgrowthonsilicon．Finally，wetriedtofabricatemaskofnano-scaleregularpatternsonsiliconsubstrate．Someoftheresultsarelistbellow：1．WedevelopedatheoreticaltreatmentforsimulationofphotoelectronicdevicelikeLEDsand

7、OLED．WeforthefirsttimeusedtheplanarsourcemodeltodealwiththeradiationofLEDs，whichprovidedcloserresultstotheexperimentfindingwhencomparedtothatfromtraditionalpointsourcemodel．2．Byusingoursimulationplatform,weforthefirsttimeproposedtheLEDsstructurewithinterracialphoton