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1、Vol.32,No.12JournalofSemiconductorsDecember2011WaferbackpressurecontrolandoptimizationintheCMPprocessMenYanwu(门延武)Ž,ZhangHui(张辉),ZhouKai(周凯),andYePeiqing(叶佩青)StateKeyLaboratoryofTribology,TsinghuaUniversity,Beijing100084,ChinaAbstract:Chemicalmechanicalpolishing(CMP)isthemosteffec
2、tivewaferglobalplanarizationtechnology.TheCMPpolishingheadisoneofthemostimportantcomponents,andzonebackpressurecontroltechnologyisusedtodesignanewgenerationofpolishinghead.Thequalityofpolishingnotonlydependsonslurry,butalsode-pendsontheprecisecontrolofpolishingpressures.DuringtheCM
3、Ppolishingprocess,thesetpressureofeachchamberisusuallynotthesameandthepresenceofaflexibleelasticdiaphragmcausescouplingeffects.Becauseofthecouplingeffects,theidentificationofmulti-chambersandpressurecontrolsbecomescomplicated.Tosolvethecouplingproblem,thispaperpresentsanewmethodofm
4、ulti-chamberdecoupledcontrol,andthensystemidentificationandcontrolparametertuningarecarriedoutbasedonthemethod.Finally,experimentsofmulti-chambersinflatedatthesametimeareperformed.Theexperimentalresultsshowthatthepresenteddecouplingcontrolmethodisfeasibleandcorrect.Keywords:CMP;zon
5、epressurecontroltechnology;decouplingcontrolDOI:10.1088/1674-4926/32/12/126002EEACC:25021.IntroductionZonebackpressurecontroltechnologyŒ3•isstillahotre-searchissue.ThetechnologyinvolvesdividingawaferintoWiththerapiddevelopmentofthesemiconductorindustry,severalzonesand,bycontrolling
6、thebackpressureofeachintegratedcircuitmanufacturingequipmentandtechnology,ofthezones,adjustingtheregionalMRRtoguaranteeglobaloneofthetoptechnologies,isthecoreofinformationtech-flatness.AppliedMaterialshavestudiedthetechnologybe-nology.Chemicalmechanicalpolishing(CMP),photolithog-fo
7、re,butthereisnopublicinformationavailable.SpeedFam-raphy,etching,ionimplantationandphysicalvapordepositionIPEChavestudiedamulti-zonepressurecompensationalgo-(PVD)/chemicalvapordeposition(CVD)isparalleltothecorerithmwhere,first,thewafersurfacethicknessprofileisob-ofkeytechnologiesin
8、large-scaleintegratedcircu
