《influence_of_se_flux_on_the_growth_of_cigs_thin_films》

《influence_of_se_flux_on_the_growth_of_cigs_thin_films》

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1、ThinSolidFilms431–432(2003)31–36InfluenceoftheseleniumfluxonthegrowthofCu(In,Ga)Sethinfilms2a,aabaaG.Hanna*,J.Mattheis,V.Laptev,Y.Yamamoto,U.Rau,H.W.SchockaInstitutfurPhysikalischeElektronik,UniversitatStuttgart,Pfaffenwaldring47,70569Stuttgart,Germany¨¨bDepartmentofElectricalEnginee

2、ring,FukuiNationalCollegeofTechnology,16-1Sabae916-8507,JapanAbstractInordertocontroltheseleniumtometalfluxratio(SMR)duringtheco-evaporationprocessforthefabricationofCu(In,Ga)Se2(CIGS)thinfilms,weestablishanewmethodforthedeterminationofthefluxes.CIGSabsorberlayerspreparedatvaryingSMR

3、sexhibiteithermetalrich(atSMR(1.5)orNa-rich(SMRs4.5)segregations,whichlimittheperformanceofthecells,andtherebydefineaminimumSMRneededtoobtaingoodqualitymaterial.ThisminimumSMRand,therefore,theoverallseleniumconsumptionarelowerwhenusingfastprocesses.Asystematicstudyonthetextureofabsor

4、berlayerspreparedbythreestageprocessesshowsthatincreasingtheseleniumfluxleadstowardsa(220y204)orientation,whileeitherahighNasupply(NaFprecursor)oralackofNa(Na-barrierlayer)promotesthe(112)orientation.2003PublishedbyElsevierScienceB.V.Keywords:Seleniumflux;Fluxcalibration;Texture;Cu(

5、In,Ga)Se;Solarcells21.Introduction2.CalibrationoftheseleniumfluxInthissectionwepresentamethodfortheaccurateStudyingtheinfluenceoftheseleniumfluxonthedeterminationoftheseleniumandmetalfluxesFSeyMe,growthofCu(In,Ga)Se2(CIGS)thinfilmsisimportanti.e.thenumberofSeyMeatomsimpingingperunitf

6、oratleasttworeasons.First,solarcellsbasedonCIGStimeandunitvolumeontothesubstrateduringaco-areontheedgeoflarge-scaleproduction.Therefore,evaporationoftheelements.Theseleniumandmetalquestionssuchasthoseoftheminimaluseofmaterialsfluxescannotbedetermineddirectly.Ratecontrolsys-ordevicequ

7、alityvs.processvelocityhavegainedmoretems(RCS)suchasmassspectrometers,atomicabsorp-importance.Inordertoaddressthisissue,weneedationspectrometers,orquartzcrystalratemonitorsdoprecisecontroloftheelementalcompositionintheeitherhaveasignalthatisrelatedtothefluxbutnotvaporflux,whichisnote

8、asytoobtaind

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