Etching Process 英文文献资料

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1、EtchingProcess1ContentsßEtchingIntroductionßDryEtchingProcessßWetEtchingProcessßCleaningProcessIntroductionßSummary2ßEtchingIntroduction(4)曝光、顯影(1)基板表面平坦化薄膜區(5)蝕刻（DryorWet）(2)鍍膜黃光區(3)上光阻(6)去光阻（Wet）蝕刻區3EtchProfile4DryEtchvs.WetEtch¢ComparisonofEquipmentComparisonofDryEtchWet

2、etchEquipmentInitialCostHighLowFootPrintSmallLargeRunningCostLowHighThroughputLowHighUp-TimeHighHigh5DryEtchvs.WetEtch¢ComparisonofProcessComparisonofProcessDryEtchWetetchEtchRateLowHighUniformityGoodPoorRepeatabilityGoodPoorCDLossSmallLargeSelectivitytoUnderLayerPoorGoodPr

3、ofileControlGoodVeryPoorMultiLayerEtchPossibleDifficult6EtchingMechanism（1）7EtchingMechanism（2）8ContentsßEtchingIntroductionßDryEtchingProcessDryEtchingProcessßWetEtchingProcessßCleaningProcessIntroductionßSummary9DryEtch–WhatisPlasma?¢Plasma-•◆Aplasmaisa“quasi-neutral”gaso

4、fchargedandneutralparticleswhichexhibits“collectivebehavior”.-◆指一個遭受部分離子化的氣體；氣體的組成，有各種帶電荷的電子、離子(Ion)，及不帶電的分子和原子團(Radicals)等，其總帶電量為零。10DryEtch–WhatisPlasmaetch?•◆產生Plasma三要素:RFPower/ElectrodeSpace/LowPressure11NonmetallicEtchingFilmEtchantSelectivityα-SiSF/O62CF4/O2Cl2/O250:

5、1HBr/O2100:1SiNxSF6/O2goodCF4/O2NF3/O2CHF3/CH2F2/O2TEOS&SiOxCF4/O2CHF3/O2C4F812MetallicEtchingFilmEtchantAl&TiBCl3/Cl2BCl3enhancetheetchabilityofmetaloxideininitiateetchingCrCl2/O2ResidualCl2exposureinatmospherichumiditytoformHCl,whichcorrodethemetal.MoW&MoSF6/CF4/O2Cl2/O2I

6、TOCH4/H2Cl2HIHBr13SiOxmechanism14WhataretheconcernsforDryetching？¢Uniformity&Etchingrate¢Taperprofilecontrol¢CDlosscontrol¢Selectivity¢Plasmadamage¢PRremoval¢Residue¢EPDcontrol15TaperProfileControl16TaperProfileControl17TaperProfileControl18TaperProfileControl¢Stepcoverage1

7、9TaperProfileControl¢Taperingfeaturebyresisterosion20CDLossControl¢CriticalDimensionLoss◆黃光製程完成後原本是10um的線，經過蝕刻製程後量測，線寬變為9um，則CDLoss為1um。◆線寬越來越小時，CDLossControl則更為重要。◆Taper會影響線寬。◆當線寬變小時，Taper較不重要，CDLoss則較為重要。21Selectivity22PlasmaDamage¢PRafterImplantation23PRRemoval¢PRRemoval

8、Issue◆Iondopping製程完成後，光阻會有無法去除的問題，尤其是在高劑量及長時間的製程後。◆乾蝕刻製程如果蝕刻時間過久，也會有光阻去除的問題。◆濕蝕刻時，