A High-Efficiency, High-Frequency Boost Converter using Enhancement Mode GaN DHFETs on Silicon

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1、AHigh-Efficiency,High-FrequencyBoostConverterusingEnhancementModeGaNDHFETsonSiliconJordiEvertsx,JoDasy,JeroenVandenKeybusz,JanGenoeyx,MarianneGermainy{andJohanDriesenKath.UniversiteitLeuven(K.U.Leuven)yIMECLeuvenzTRIPHASEDept.ofElectricalEngineeringESAT-ELECTAKapeldreef75RomeinseStraat18Kast

2、eelparkArenberg10B-3001Leuven,BelgiumB-3001Leuven,BelgiumB-3001Leuven,Belgiumjdas@imec.bejeroen.vandenkeybus@triphase.euPhone:+3216328620,Fax:+3216321985({currentaddress:jordi.everts@esat.kuleuven.beEpiGaN,Leuven,Belgium(xalsoat:KHLim,Diepenbeek,Belgium)Marianne.Germain@epigan.com)Abstract—Abo

3、ostconverterwasconstructedusingahighvolt-double-heterostructureFETs(DHFETs)[5],usingadedicatedageenhancementmode(E-mode)AlGaN/GaN/AlGaNDHFEThigh-frequencyboost-converterset-up.AhardswitchingboosttransistorgrownonSi<111>.Theverylowdynamicon-topologyisagoodtooltodemonstratetheadvantagesofresista

4、nce(Rdyn0:23)andverylowgate-charges(e.g.GaN-basedtransistorsinapowerelectronicconverterasitisQgate15nCatVDS=200V)resultinminortransistorlosses.Togetherwithaproperdesignofthepassivecomponentsoftenusedforpower-factor-correction(PFC)frontendsandandtheuseofSiCdiodes,veryhighoverallefficienciesare

5、asthebasicbuildingblockofhalfbridges.Asintoday’sreached.MeasurementsshowhighconversionefficienciesofSMPSdesignthetrendistomovetowardamorecompact96.1%(Pout=106W,76to142Vat512.5kHz)and93.9%circuitdesign,theswitchingfrequenciesofinterestapproach(Pout=97:5W,78to142Vat845.2kHz).Theseare,toourtheMHzr

6、ange.First,theconverterconstructionisdiscussed,knowledge,thehighestefficienciesreportedforanenhancementmodeGaNDHFETonSiinthisfrequencyrange.Thetransistorincludingthedesignofthemainpowercircuit,thegateswitchinglossesareconcentratedintheturn-oninterval,anddrivecircuitandtheinductor.State-of-thear

7、tSiCdiodesanddominateathighfrequencies.Thisisduetoalimitedpositiveanin-housedevelopedplanarinductorcontributetoamoregate-voltageswing,asthegate-sourcedioderestrictsthepositivecompactdesignandahighestpossibleefficiency.Inanextdrivevoltage