ramtron_fram_介绍

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1、RamtronFRAM产品应用Steve2007CompanyOverviewRamtronHeadquartersColoradoSprings,COBusiness:SpecialtySemiconductorsProducts:Ferroelectric-enabledanalogandmixedsignalICsandnonvolatilememoryEmployees:105Ticker:RMTR(1992),NasdaqNMSRevenues:FY2007$43MRamtron公司成立于1984年，总部设

2、在美国科罗拉多州的ColoradoSprings市并于1992年在美国那斯达克上市(RMTR)。Ramtron是当今领先的铁电内存技术专利和量产化的FRAM产品供货商(1998年)ToexpeditethecommercializationofFRAMproductsandtechnologies,Ramtronhasfoundryand/orlicensingagreementswithtopmemoryproducers.母公司(23%Ramtron控股权)Nasdaq:RMTRFRAM授权专利权的厂商经Ramt

3、ron公司授权FRAM开发专利权的厂商及制造伙伴FRAM(铁电记忆体),您制胜的伙伴FRAM與EEPROM或Flash技術之比較:較快速(70ns)無限次數的讀、寫(UnlimitedEnduranceCycles)FRAM完全不需要後備電池即可保存資料NoBattery低耗電(2%)NoBatteryNoBattery铁电记忆体(FRAM)的工作原理铅,锆,钛晶体(Lead,Zirconium,Titanium)FRAM与EEPROM的比较1.3S10mS1e63mA150uAX24C16Xicor1.3S10mS

4、1e63mA100uA24AA16Microchip1.3S10mS1e62mA300uAST24C16ST1.3S10mS1e63mA18uAAT24C16Atmel47mS72uS1e1675uA1uAFM24CL16Ramtron整个芯片写满时间字节写入时间写入次数写入电流(100KHz)待机电流型号供货商40ms211ms(5MHz)53ms(20MHz)WriteCycleTime-128Bytes(sequential)10ms57ms(5MHz)14ms(20MHz)WriteCycleTime-32B

5、ytes*(sequential)10ms8ms(5MHz)2ms(20MHz)WriteCycleTime-1Byte(randomlocations)EEPROMFRAMParameterSerialSPIFRAMvsEEPROMEEPROMvsFRAMWriteOperationFRAMEEPROMPageBufferBuffer10msWriteDelayNoWriteDelaysWriteDelayCLOCKRATEFRAMI2CWriteSpeedCLOCKRATEItshouldbeclearthats

6、peedisnotmeasuredbyclockratealoneWriteDelayWriteSpeedAdvantagewithSPIEvenonafastpowerdown,theFRAMcanwriteover50,000timesbeforetheVDDmoves0.23VPowerSupplyChanges终极存储器-铁电存储(FRAM)Serial(I2CBus)FRAMProductDensityPackageMaxbusspeedVddFM24C512512Kb8S1MHz5VFM24C256256

7、Kb8SE1MHz5VFM24CL6464Kb8S&DFN1MHz2.7-3.6VFM24C6464Kb8S1MHz5VFM24CL1616Kb8S&DFN1MHz2.7-3.6VFM24C16A16Kb8S1MHz5VFM24CL044Kb8S1MHz2.7-3.6VFM24C04A4Kb8S1MHz5VSerial(SPIBus)FRAMProductDensityPackageMaxbusspeedVddFM25H202M8S40MHz2.7-3.6VFM25L512512Kb8S&DFN25MHz2.7-3.

8、6VFM25256256Kb8S15MHz4.0V-5.5VFM2564064Kb8S5MHz5VFM25CL6464Kb8S&DFN20MHz2.7-3.6VFM25C16016Kb8S20MHz5VFM25L1616Kb8S&DFN18MHz2.7-3.6VFM25040A4Kb8S20MHz5vFM25L044Kb8S14MHz2.7V-