Multiplication Noise in Uniform Avalanche Diodes. IEEE Transactions, Electron Devices

Multiplication Noise in Uniform Avalanche Diodes. IEEE Transactions, Electron Devices

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时间:2019-07-16

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1、IEEETWNSACTIOSSOKELECTRONDEVICESVOL.ED-13,NO.1JANUARY,1966MultiplicationNoiseinUniformAvalancheDiodesR.J.McINTYRE,SENIORMEMBER,IEEEAbstract-AgeneralexpressionisderivedfromwhichMODELthespectraldensityofthenoisegeneratedinauniformlymultiplyingp-njunctioncanbecalculatedforany

2、distribu-Weconsiderareversebiasedn-pjunctionhavingtionofinjectedcarriers.Theanalysisislimitedtotheadepletionlayerofwidthw.TheelectricfieldEwhitenoisepartofthenoisespectrumonly,andtodiodescanbeofarbitraryprofile,provideditissuffi-havinglargepotentialdropsacrossthemultiplyin

3、gregionofcientlyhighinpartofthedepletionlayertocausethedepletionlayer.Itisshownforthespecialcaseinwhichp=kcu,wherekisaconstantandcuand0aretheionizationimpactionization.Weassumethatelectronsandcoefficientsofelectronsandholes,respectively,thattheholestraversingthedepletionla

4、yerhaveionizationnoisespectraldensityisgivenbyprobabilitiesperunitlengthequaltoaandp,respectively,whicharefunctionsofonlytheelectricfieldE.Althoughthisistheusualassump-tion,itiswelltopointoutjustwhatitimplies.where2MisthecurrentmultiplicationfactorandZi,theMoreprecisely,th

5、eionizationprobabilityofaninjectedcurrent,iftheonlycarriersinjectedintothedeple-electronoraholeisafunctionofitsinstantaneoustionlayerareholes,andbymomentum.Acarriermovinginaconstantelectricfieldwillexperienceawholespectrumofmomentumvalueswhichcanbedescribedbyamomentumproba

6、bilitydistributionforthatparticularvalueiftheonlyinjectedcarriersareelectrons.AnexpressionisalsoderivedforthenoisepowerwhichwillbedeliveredtoofE.ItisonlywhenithasamomentumattheanexternalloadforthelimitM-+a.topendoftheprobabilitydistributionthatitiscapableofhavinganionizing

7、collision.Theassump-INTRODUCTIONtionthataorpisafunctionofEonlyandnotofthepreviouscarrierhistoryimpliesthattheECENTADVANCESintechnology[l],[2]momentumofanindividualcarrierwillsampleahavemadepossiblethefabricationofsemi-largenumberofvaluesthroughoutthewholemo-conductorp-njun

8、ctionswhichhavemoreormentumprobabilitydistributionwithinadistancelessuniformavalanchemult

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