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1、LETTERSPUBLISHEDONLINE:9MARCH2014
2、DOI:10.1038/NNANO.2014.14Solar-energyconversionandlightemissioninanatomicmonolayerp–ndiodeAndreasPospischil,MarcoM.FurchiandThomasMueller*Thelimitationsofthebulksemiconductorscurrentlyusedinfrommonolayer,bilayerandmultilayerflakes.Inagreementwithelectr
3、onicdevices—rigidity,heavyweightandhighcosts—previousreports19,pronouncedphotoluminescenceemissionathaverecentlyshiftedtheresearcheffortstotwo-dimensional1.64eV,withaspectralwidthof56meV(full-widthathalf-atomiccrystals1suchasgraphene2andatomicallythinmaximum,FWHM),isobtainedatthedirec
4、texcitonictransitiontransition-metaldichalcogenides3,4.ThesematerialshavetheofmonolayerWSe.Asthethicknessisincreased,astrongreduction2potentialtobeproducedatlowcostandinlargeareas,whileinquantumyieldisobservedduetothetransitionofthematerialmaintaininghighmaterialquality.Thesepropertie
5、s,aswellfromadirectsemiconductortoanindirectsemiconductor16,17,19.astheirflexibility,maketwo-dimensionalatomiccrystalsInadditiontophotoluminescence,weperformedRamanmeasure-attractiveforapplicationssuchassolarcellsordisplayments,theresultsofwhicharepresentedforthemonolayerflakein21panels
6、.ThebasicbuildingblocksofoptoelectronicdevicestheinsetofFig.1d.Wefindapronouncedpeakat248.7cmand21arep–njunctiondiodes,buttheyhavenotyetbeendemon-asmallshoulderat260cm,provingthattheflakeisindeedstratedinatwo-dimensionalmaterial.Here,wereportap–nmonolayer19.junctiondiodebasedonanelectro
7、staticallydoped5tungstenAfterdevicefabrication,weacquired,inafirststep,thegatingdiselenide(WSe2)monolayer.Wepresentapplicationsasacharacteristicsbyinterconnectingthetwogateelectrodes(VG1¼VG2)photovoltaicsolarcell,aphotodiodeandalight-emittingandleavingthesubstrateelectricallyfloating.As
8、depictedindiode,andobtainlight–powerconversionandelectro-Fig.2a,thedeviceexhibitsclearambipolartransfercharacteristics,luminescenceefficienciesof∼0.5%and∼0.1%,respectively.demonstratingthatbothelectrons(n)andholes(p)canbeinjectedGivenrecentadvancesinthelarge-scaleproductionoftwo-intoth
9、echan
