常用高反压大功率VMOS场效应管

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1、常用高反压大功率VMOS场效应管型号材料外形用途与特性备注IRF340N-FET28BMOS-cnhS-L400V10A125W41/36nS0.55QIRF35ON-FET28BMOS-enhS丄400V15A150W65/75nS0.30QIRF360N-FET28BMOS-enhS-L400V25A300W140/99nS0.20Q1RF440N-FET28BMOS-enhS-L500V8A125W35/30nS0.85QIRF450N-FET28BMOS-enhS-L500VI3AI25W66/60nS0.40QIRF460N-FET28BMOS-enh

2、S-L500V21A300W120/98nS0.27QIRF470(A)N-FET323MOS-enhS-L500V24A300W45/50nS0.23QIRF740N-FET138AMOS-enhS-L400V10A125W41/36nS0.55QIRF840N-FET138AMOS-enhS-L500V8A125W35/30nS0.85QIRFAC50N-FET28MOS-cnhS-L600V10A150W0.58QIRFAF50N-FET28MOS-cnhS-L900V6.2A150W66/57nS1.60QIRFAG50N-FET28MOS-enhS丄1

3、000V5.6A150W44/60nS2.00QIRFH35ON-FET386AMOS-enhS丄400V15A150W65/75nS0.30QIRFH450N-FET386AMOS-enhS-L500V13A150W50/70nS0.40QIRFIP350N-FET323MOS-enhS-L400VI2A96W0.30QIRFIP450N-FET323MOS-enhS-L500V10A96W0.40QIRFK3D450FET302MOS-HBMS-L500V33A625W0」35Q半桥组件IRFK4H450FET302MOS-INMS-L500V44A500W

4、0.10Q独立组件IRFK4HC50FET302MOS-INMS-L600V35A500W0.15Q独立组件IRFK4HE50FET302MOS-INMS丄800V26A500W0.30Q独立组件IRFK6H450FET302MOS-INMS丄500V42A625W0.067Q独立组件1RFK6H350FET302MOS-INMS-L400V48A625W0.05Q独立组件IRFK6HC50FET302MOS-INMS-L600V48A625W0.10Q独立组件IRFK6HE50FET302MOS-INMS-L800V35A625W0.20Q独立组件1RFM46

5、0N-FET234BMOS-enhS-L500V25A250W0.20QIRFP35ON-FET323AMOS-enhS-L400VI6A180W77/71nS0.30QIRFP360N-FET323AMOS-enhS-L400V23A250W140/99nS0.20QIRFP450N-FET323AMOS-enhS-L500V14A180W66/60nS0.40QIRFP460N-FET323AMOS-enhS-L500V20A250W120/98nS0.27QIRFP47(A)N-FET28BMOS-cnhS-L500V24A300W45/50nS0.23Q

6、IRFV360N-FET234MOS-cnhS-L400V22A250W0.21QIRFV460N-FET234MOS-cnhS-L500V21A250W0.27QIRGBC20IGBT138S-L600V13A60W53/242nSIRGBC30IGBT138S-L600V23A100W77/138nS1RGBC36IGBT138S-L600V34A100W103/629nSIRGBC40IGBT138S-L600V40A160W134/81nSIRGBC46IGBT138S-L600V50A160W169/556nS型号材料外形用途与特性备注IRGPC40I

7、GBT323S-L600V40A160W134/81nSIRGPC46IGBT323S-L600V60A160W169/556nSIRGPC50IGBT323S-L600V55A200W181/91nSIRGPC56IGBT323S-L600V70A200W233/407nS2SK402N-FET149MOS-enhS-L400V8A100W1.75Q2SK490N-FET180MOS-enhS-L400V10A100W0.8()Q2SK534N-FET149MOS-enhS-L800V5A100W4.00Q2SK559N-FET149MOS-enhS-L450

8、V15AI00W0.36