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1、DTU15N10/DTL15N10N-Channel100V(D-S)MOSFETFEATURESPRODUCTSUMMARY•TrenchFET®PowerMOSFETSVDS(V)RDS(on)()ID(A)•175°CJunctionTemperature0.095atVGS=10V15•100%R100gTested0.100atVGS=6V15APPLICATIONS•PrimarySideSwitchTO-251DTO-252GGDSSGDSTopViewN-ChannelMOSFETTopVie
2、wABSOLUTEMAXIMUMRATINGS(TC=25°C,unlessotherwisenoted)ParameterSymbolLimitUnitDrain-SourceVoltageVDS100VGate-SourceVoltageVGS±20TC=25°C15ContinuousDrainCurrent(TJ=175°C)bIDTC=125°C8.7PulsedDrainCurrentIDM25AContinuousSourceCurrent(DiodeConduction)IS15Avalanch
3、eCurrentIAR15RepetitiveAvalancheEnergy(DutyCycle1%)L=0.1mHEAR11.3mJTC=25°C62bMaximumPowerDissipationPDWTA=25°C2.7aOperatingJunctionandStorageTemperatureRangeTJ,Tstg-55to175°CTHERMALRESISTANCERATINGSParameterSymbolTypicalMaximumUnitt10s1620Junction-to-Ambie
4、ntaRthJASteadyState4555°C/WJunction-to-CaseRthJC22.4Notes:a.Surfacemountedon1"x1"FR4board.b.SeeSOAcurveforvoltagederating.23553Q68872黄R1376032电50701DTU15N10/DTL15N10SPECIFICATIONS(TJ=25°C,unlessotherwisenoted)ParameterSymbolTestConditionsMin.Typ.aMax.UnitSta
5、ticDrain-SourceBreakdownVoltageVDSVGS=0V,ID=250µA100VGateThresholdVoltageVGS(th)VDS=VGS,ID=250µA2Gate-BodyLeakageIGSSVDS=0V,VGS=±20V±100nAVDS=100V,VGS=0V1ZeroGateVoltageDrainCurrentIDSSVDS=100V,VGS=0V,TJ=125°C50µAVDS=100V,VGS=0V,TJ=175°C250On-StateDrainCurre
6、ntbID(on)VDS=5V,VGS=10V15AVGS=10V,ID=15A0.0770.095VGS=10V,ID=15A,TJ=125°C0.190Drain-SourceOn-StateResistancebRDS(on)VGS=10V,ID=15A,TJ=175°C0.250VGS=6V,ID=10A0.0810.100ForwardTransconductancebgfsVDS=15V,ID=15A25SDynamicaInputCapacitanceCiss900OutputCapacita
7、nceCossVGS=0V,VDS=25V,f=1MHz115pFReverseTransferCapacitanceCrss70TotalGateChargecQg2025Gate-SourceChargecQgsVDS=75V,VGS=10V,ID=15A5.5nCGate-DrainChargecQgd7GateResistanceRg13.2Turn-OnDelayTimectd(on)812RiseTimectrVDD=75V,RL=53555nsTurn-OffDelayTimectd(off)
8、ID15A,VGEN=10V,RG=2.51725FallTimectf3045Source-DrainDiodeRatingsandCharacteristic(TC=25°C)PulsedCurrentISM15ADiodeForwardVoltagebVSDIF=15A,VGS=0V0.91.5VSource-DrainReverseRecoveryTimetrrIF=15A