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时间:2020-04-21
《B和H离子顺次注入单晶Si引起的缺陷及其热演变-论文.pdf》由会员上传分享,免费在线阅读,更多相关内容在应用文档-天天文库。
1、第30卷第4期原子核物理评论、,0l_30.No.42013年12月NuclearPhysicsReviewDec..2013ArticleID:1007.4627(2013)04—0471—06ThermalEvolutionofDefectsinCrystallineSiliconbySequentialImplantationofBandHIonsZHANGBei,ZHANGPeng,WANGJun,ZHUFei,’,1CAOXingzhong,ⅥNGBaoyi‘,LIUChanglong(J.
2、SchoolofScience,TianjinUniversity,Tianjin300072,China;2.KeyLaboratoryofNuclearAnalysisTechniques,InstituteofHighEnergyPsics,ChineseAcademyofSciences,Beqing100049,China;3.TianjinKeyLaboratoryofLowDimensionalMaterialsPhysicsandPreparingTechnology,Institut
3、eofAdvancedMaterialsPhysicsFacultyofScience,Tianjin300072,China)Abstract:Czn-typeSi(100)wafersweresinglyorsequentiallyimplantedatroomtemperaturewith130keVBionsatafluenceof5×1014cm一2and55keVHionsatafluenceof1×1016cm一2.Theimplantation.induceddefectswerein
4、vestigatedindetailbyusingcross—sectionaltransmissionelectronmicroscopy(XTEM)andslowpositronannihilationtechniquefSPAT).XTEMresultsclearlyshowthatsequentialimplantationofBandHionsintoSicouldeliminatethe(1l1)plateletsandpromotegrowthof(1OO)plateletsduring
5、annealing.SmeasurementsdemonstratethatinBandHsequentiallyimplantedandannealedSi,morevacancy—typedefectscouldremaininsampleregionaroundtherangeofBions.TheseresultsindicatethatthepromotionefectshouldbeattributedtotheroleofbomBandBimplantedinducedvacancy-t
6、ypedefects.Keywords:crystallineSi;Band/orHionimplantation;Hplatelets;XTEM;SPATCLCnumber:0483Documentcode:ADOI:10.11804/NuclPhysRev_30.04.4711Introductionefective.Forexample,Tongeta1.demonstratedthatahigh—qualitySOIstructurewasfabricatedatatotalfluence‘s
7、mart-Cut’isanovel,promisingproductiontechno—of2.85×1016cm一[3】.Astotheunderlyingmechanism.logyofsilicon-on-insulator(SO1)systems.Eversinceitre-someviewpointshavebeenproposed.Tongeta1.con—po~edf0rthefirsttimebyBmel[11.thistechnologyhasat-sideredthatahighn
8、umberofpointdefectsweregenera-tractedmoreattentionsandfoundpracticalapplicationsintedbypre-implantedBions,andBionsthemselvescouldthefieldofSOI.The‘Smart—Cut’ismainlybasedonhydro—traphydrogenatoms.Bothprocessesarelikelytoassistgen
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