功率损耗和温度的估算.pdf

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1、IGBTlossesandthermalIFXAIMZhouYizhengPowerLossofIGBTModulesPowerlossofanIGBTmodulecomprisesthelossofthechips&chip-terminalconnection.ThemainlossesarefromtheIGBT&FWD.IGBTgeneratespowerlossbecauseof:1)Thesaturationvoltage–Vcesatinconductionstate;2)Theswitchingenergy–Eon&Eoffdur

2、ingswitchingtransients;3)Theleakagecurrent–Icesinblockingstate.FWDalsogeneratespowerlossesbecauseof：1)Forwardvoltage–Vfinforwardconduction(free-wheeling);2)Reverse-recoveryenergy–Erecduringthereverse-recoverytransient;3)Switch-onenergyduringtheswitch-ontransient.Vcesat，Eon，Eo

3、ff，Vf&ErecarecharacteristicvaluesofIGBTandFWDchips.DifferentchiptechnologiespresentdifferentVcesat,Eon,Eoff,Vf&Erecvalues.ForinternaluseonlyPage2ValuestocalculateMaximumvirtualjunctiontemperatures¬TocomparewithmaximumTvjopofdeviceVariationofvirtualjuctiontemperaturewithtime¬T

4、oprovideinputforlifetimecalculationregardingpowercycling–BondwireliftoffVariationofcasetemperaturewithtime¬Tosettherightover-temperatureprotectionpointForinternaluseonlyPage3InputdatarequiredDevicedataForwardvoltagedropSwitchingenergy¬DC-linkanddriveractuallyused!Thermalre

5、sistanceorthermalimpedanceHeatsinkandTIMdata,ifheatsinkisalreadychoosenApplicationdataWhichcombination(s)ofoperatingparameterswilloccure¬Switchingfrequency,modulationstrategy¬Current:sinusoidalordistorted?¬Powerfactor¬Overloadconditions?¬Fundamentalfrequency¬Modulationfactor

6、ForinternaluseonlyPage4VoltageparametersSaturationvoltage(V)CEsatVisspecifiedatnominalcurrent,bothT=25℃and125℃aregivenCEsatjInfineonIGBTareallpositivetemperaturecoefficientGoodforparallelingVvalueistotallyatchipCEsatlevel,excludingleadresistanceForinternaluseonlyPage5Voltagepa

7、rametersVincreasewithIincreasingCEsatCVincreasewithVdecreasingCEsatGEVisnotrecommendedtousetoosmall,ThisincreasesIGBTbothGEForinternaluseonlyconductionandswitchinglossesPage6VoltageparametersVvalueisusedtocalculateconductionlossesCEsatVVR*ICET0CECVCEVCE(2)VCE(1)RCEIIIΔI

8、CC(2)C(1)CBasicdataforconductionlossescalculationRCEΔV