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ID:59416251
大小:8.06 MB
页数:50页
时间:2020-09-19
《Michael quirk_半导体制造技术-第十章_氧化ppt课件.ppt》由会员上传分享,免费在线阅读,更多相关内容在教育资源-天天文库。
1、SemiconductorManufacturingTechnologyMichaelQuirk&JulianSerda©October2001byPrenticeHallChapter10Oxidation©2000byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerdaObjectivesAfterstudyingthematerialinthischapter,youwillbeableto:1.Describeanoxide
2、filmforsemiconductormanufacturing,includingitsatomicstructure,howitisusedanditsbenefits.2.Statethechemicalreactionforoxidationanddescribehowoxidegrowsonsilicon.3.Explainselectiveoxidationandgivetwoexamples.4.Statethethreetypesofthermalprocessingequipment,describethefi
3、vepartsofaverticalfurnace,andgivetheattributesofafastrampverticalfurnace.5.Explainwhatisarapidthermalprocessor,itsusageanddesign.6.Describethecriticalaspectsoftheoxidationprocess,itsqualitymeasuresandsomecommontroubleshootingproblems.DiffusionAreaofWaferFabricationTes
4、t/SortThinFilmsImplantDiffusionEtchPolishPhotoCompletedwaferWaferfabrication(front-end)UnpatternedwaferWaferstartUsedwithpermissionfromAdvancedMicroDevicesFigure10.1OxideFilmNatureofOxideFilmUsesofOxideFilmDeviceProtectionandIsolationSurfacePassivationGateOxideDielect
5、ricDopantBarrierDielectricBetweenMetalLayersAtomicStructureofSiliconDioxideSiliconOxygenUsedwithpermissionfromInternationalSEMATECHFigure10.2FieldOxideLayerFigure10.3GateOxideDielectricFigure10.4OxideLayerDopantBarrierFigure10.5Table10.1OxideApplications:NativeOxideP
6、urpose:Thisoxideisacontaminantandgenerallyundesirable.Sometimesusedinmemorystorageorfilmpassivation.Comments:Growthrateatroomtemperatureis15perhouruptoabout40Å.p+SiliconsubstrateSilicondioxide(oxide)Table10.1ATable10.1OxideApplications:FieldOxidePurpose:Servesasaniso
7、lationbarrierbetweenindividualtransistorstoisolatethemfromeachother.Comments:Commonfieldoxidethicknessrangefrom2,500Åto15,000Å.Wetoxidationisthepreferredmethod.FieldoxideTransistorsitep+SiliconsubstrateTable10.1BTable10.1OxideApplications:GateOxidePurpose:Servesasadi
8、electricbetweenthegateandsource-drainpartsofMOStransistor.Comments:Growthrateatroomtemperatureis15Åperhouruptoabout40Å.Commo
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