JY15M场效应管可替hy1804-骊微电子

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1、现货TEL：13808858392杜SJY15MNChannelEnhancementModePowerMOSFETGENERALDESCRIPTIONTheJY15Mutilizesthelatesttrenchprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewithlowgatecharge.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinpowerswitchin

2、gapplicationandawidevarietyofotherapplications.FEATURES●40V/115A,RDS(ON)=3.5mΩ@VGS=10V●Fastswitchingandreversebodyrecovery●Fullycharacterizedavalanchevoltageandcurrent●ExcellentpackageforgoodheatdissipationAPPLICATIONS●Synchronousrectification●Motodrivefor12V-18VSystems●PowerManagementforInv

3、erterSystems●HardswitchedandhighfrequencycircuitsPINDESCRIPTIONJY15M1JY15MAbsoluteMaximumRatings(Tc=25ºCUnlessOtherwiseNoted)SymbolParameterLimitUnitVDSDrain-SourceVoltage40VVGSGate-SourceVoltage±20VContinuousDrainTc=25ºC115IDACurrentTc=100ºC80IDMPulsedDrainCurrent480APDMaximumPowerDissipati

4、on185WOperatingJunctionandStorageTemperatureTJTSTG-55to+175ºCRangeRθJCThermalResistance-JunctiontoCase0.78ºC/WRθJAThermalResistance-JunctiontoAmbient62.5ºC/WElectricalCharacteristics(Ta=25ºCUnlessOtherwiseNoted)SymbolParameterConditionsMinTypMaxUnitStaticCharacteristicsDrain-SourceBVDSSVGS=0

5、V,IDS=250uA40VBreakdownVoltageZeroGateVoltageIDSSVDS=40V,VGS=0V1uADrainCurrentGate-BodyLeakageIGSSVGS=±20V,VDS=0V±100nACurrentGateThresholdVGS(th)VDS=VGS,IDS=250uA13VVoltageDrain-SourceRDS(ON)VGS=10V,IDS=30A3.54.0mΩOn-stateResistanceJY15M2JY15MElectricalCharacteristics(Ta=25ºCUnlessOtherwise

6、Noted)SymbolParameterConditionsMinTypMaxUnitDrain-SourceDiodeCharacteristicsDiodeForwardVSDVGS=0V,ISD=20A1.4VVoltageTrrReverseRecoveryTimeISD=40A45nsQrrReverseRecoveryChargedi/dt=100A/us92nCDynamicCharacteristicsTd(on)Turn-onDelayTime35TrTurn-onRiseTime95VDS=20V,RG=3Ω,nsIDS=30A,VGS=10V,Td(of

7、f)Turn-offDelayTime78TfTurn-offFallTime46CISSInputCapacitance3875VGS=0V,COSSOutputCapacitanceVDS=20V,680pFf=1.0MHzReverseTransferCRSS362CapacitanceQgTotalGateCharge96116VDS=32V,ID=30A,QgsGate-SourceCharge25nCVGS=10VQgdGate