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1、Metalization--PVD2014.08.181WHATISSPUTTERING?macroscopicmicroscopicDefinition:Todislodge(atoms)fromthesurfaceofmaterialsbycollisionwithhighenergyparticles;also,todepositbysuchafilm.(accordingtoWebster’sdictionary)SchematicofDCsputtering-powerArAr+Ar+Ar+Sche
2、maticofDCsputtering-powerAr+Ar+Ar+AlAlAlArAlSchematicofDCsputtering-powerAr+Ar+Ar+ArAlAlAlAlMagnetronSputtering•StrongmagnetisplacedunderthematerialstobedepositedthusproduceamagneticfieldinadditiontotheDCelectricalfield;•UndertheLorentzforce,Hoppingelectrosi
3、strappedneartothetargetthusenhancedtheionizationefficiency.•Advantage:–highdepositionrate~1m/minforAl,(10timeshigher)–reducingelectronbombardmentofSub.–extendingtheoperatingvacuumrangeReactivesputtering-sputteringmetallictargetinthepresenceofareactivegas-eq
4、).mixedwithingas(Ar)oxides–Al2O3,SiO2,Ta2O5(O2)nitrides–TaN,TiN,Si3N4(N2,NH3)carbides–TiC,WC,SiC(CH4,C2H4,C3H8)A:compoundsB:doping,alloysA:allNreactswithTafilm2dopedmetal(e.g.TaN0.01)atomicratioofNtoTaincreasesasN2pressureincreaseB:Compoundformationantheme
5、taltarget,plasmaimpedanceisAeffectivelylowerinstateBthaninstateA,sinceion-inducedsecondaryelectronBemissionismuchhigherforcompoundsthanformetals.SputterYieldEjected_Atoms(molecules)SIncident_ionS:typically0.01~4;Periodicallychangewithatomicmassandradius;Acc
6、ordingtothecollisioncascadetheorybySigmund34MMES121(E1KeV)214(MM)E12b3.56ZZMS(E)S121n(E1KeV)2211MMEZ3Z312b12:ameasureoftheefficiencyofmomentumtransferincollisionSn(E):stoppingpower-ameasureoftheenergylossperunitlengthduetonuclearcollision2
7、007/7/27Noblemetalhashighersputteringyield;SputteringprocessvariablesWhatwecareaboutthesputtering?KeyindexoffilmRecipe/equipmentparametersResistivityPressureResistivityNUVacuum;WemusttoThicknessNUbuildabridgeHeatertemp,Sub.gasflow;Particleshere!PowerEtchingc
8、apabilitiesCoolingrate;Micro-structureTarget-subspacingStressTargetgrainsize/purity;Reflectivity2ndphase/textureoftargetStoichiometryTargetlifetimeStepcoverageShield/magnet/partsassemblyMorpholo