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1、JOURNALOFAPPLIEDPHYSICS102,0535192007Metal-organicchemicalvapordepositiongrowthofInGaN/GaNhighpowergreenlightemittingdiode:EffectsofInGaNwellprotectionandelectronreservoirlayerJin-WooJu,Eun-SilKang,Hwa-SooKim,Lee-WoonJang,Haeng-KeunAhn,aJu-WonJeon,andIn-HwanLeeaSchoolofAdvancedMateria
2、lsEngineeringandResearchCenterofAdvancedMaterialsDevelopment,ChonbukNationalUniversity,Chonju561-756,KoreaJongHyeobBaekLEDDeviceTeam,KoreaPhotonicsTechnologyInstitute,Gwangju500-460,KoreaReceived23March2007;accepted16July2007;publishedonline14September2007Weinvestigatedtheeffectsofthew
3、ellprotectionlayerWPLandelectronreservoirlayerERLontheemissionpropertiesofInGaN/GaNgreenmultiplequantumwellsMQWs.InordertoincreasetheiremissionwavelengthbypreventingthevolatileInGaNwell,athinGaNWPLwascoatedsubsequentlyoneachwelllayeratthesametemperaturebeforeramping-upthetemperatur
4、etogrowtheGaNbarrier.ItwasfoundthattheWPLdirectlyinßuencedtheindiumcontentandopticalpropertiesoftheMQW.Theindiumcontentwasinfactincreased,aswasevidentfromthex-raydiffractionandphotoluminescenceexperiments.Then,toexplorethepossibilityofenhancingthequantumefÞciencybyincreasingtheelectronca
5、pturerate,asuperlatticeERLcomposedoftenpairsofInGaN/GaNwasembeddedbetweentheMQWandn-GaN.TheelectroluminescenceintensityofthegreenlightemittingdiodewiththeERLwasuptothreetimeshigherthanthatofthediodewithouttheERL.TheseresultsimplythatthecarriercapturebytheMQWissigniÞcantlyimprovedbytheadd
6、itionalsuperlatticeERL,whichconsequentlyleadstotheenhancementofthequantumefÞciency.©2007AmericanInstituteofPhysics.DOI:10.1063/1.2776218I.INTRODUCTIONelaborativeapproacheshavebeendevisedtoobtainagreenemissionfromtheblueMQWsbymeansoftheWPL.GaN-basedmaterialsarepromisingforopticaldevices
7、InordertofurtherimprovethelightemittingefÞciency1,2operatedintheblueandgreenwavelengths.Infact,oftheLEDs,itisessentialtomaximizethenumberofcar-nitride-basedblue/greenlightemittingdiodesLEDsgrownriersrecombininginsidetheactiveregionwhileminimizingbymetal-organicchemicalv
